Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Philosophical Magazine

Volumn 87, Issue 13, 2007, Pages 2041-2065

  Hangleiter, A ^a   Netzel, C ^a   Fuhrmann, D ^a   Hitzel, F ^a   Hoffmann, L ^a   Bremers, H ^a   Rossow, U ^a   Ade, G ^b   Hinze, P ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ENERGY BARRIERS; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; PHASE SEPARATION;

EMISSION EFFICIENCY; NON RADIATIVE RECOMBINATION; ROOM TEMPERATURE; V-SHAPED PITS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34248546049     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430701199663     Document Type: Article

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