A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode

Nanotechnology

Volumn 20, Issue 8, 2009, Pages

  Chen, Lung Chien ^a   Wang, Chih Kai ^a   Huang, Jenn Bin ^b   Hong, Lu Sheng ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; ANODIC ALUMINUM OXIDES; GAN-BASED LEDS; GAN-BASED LIGHT-EMITTING DIODES; INJECTION CURRENTS; LIGHT OUTPUT POWER; NANO-POROUS; NANOPOROUS ALUMINUMS; PORE DIAMETERS; PORE SPACINGS; SAPPHIRE SUBSTRATES;

ALUMINA; ALUMINUM; ALUMINUM NITRIDE; BUFFER LAYERS; CORUNDUM; CURRENT DENSITY; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM ALLOYS;

ALUMINUM; ALUMINUM NITRIDE; ALUMINUM OXIDE; BUFFER; NITROGEN DERIVATIVE; UNCLASSIFIED DRUG; ALUMINUM DERIVATIVE; GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; ELECTRIC CURRENT; LIGHT EMITTING DIODE; NANODEVICE; NANOFABRICATION; NANOPORE; POWER SPECTRUM; PRIORITY JOURNAL; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; POROSITY; SURFACE PROPERTY; ULTRASTRUCTURE;

ALUMINUM COMPOUNDS; ALUMINUM OXIDE; CRYSTALLIZATION; ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LIGHTING; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; POROSITY; SURFACE PROPERTIES;

EID: 65249116397     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/8/085303     Document Type: Article

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