Electrochemically grown vertically aligned ZnO nanorod array/p +-Si (100) heterojunction contact diodes

Thin Solid Films

Volumn 548, Issue , 2013, Pages 235-240

  Rodríguez Moreno, Jorge ^a   Navarrete Astorga, Elena ^a   Romero, Rocio ^a   Martín, Francisco ^a   Schrebler, Ricardo ^b   Ramos Barrado, José R ^a   Dalchiele, Enrique A ^c  

^a UNIVERSITY OF MÁLAGA   (Spain)

^b PONTIFICIA UNIVERSIDAD CATÓLICA DE VALPARAÍSO   (Chile)

^c INSTITUTO DE FÍSICA   (Uruguay)

Author keywords

Electrodeposition; Heterojunction diode; p Type silicon; ZnO nanorod arrays

Indexed keywords

CONDUCTION MECHANISM; HETEROJUNCTION DIODES; IV CHARACTERISTICS; P-TYPE SILICON; RECTIFICATION RATIO; RECTIFYING BEHAVIORS; VERTICALLY ALIGNED; ZNO NANOROD ARRAYS;

ELECTRODEPOSITION; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; SILICON; THERMIONIC EMISSION; ZINC OXIDE;

NANORODS;

EID: 84887426248     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.09.091     Document Type: Article

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