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Materials Science and Engineering: B

Volumn 177, Issue 11, 2012, Pages 785-790

Properties of PEDOT:PEG/ZnO/p-Si heterojunction diode

(3) Soylu, Murat a Girtan, Mihaela b Yakuphanoglu, Fahrettin c

a BINGOL UNIVERSITY (Turkey)

b UNIVERSITÉ D'ANGERS (France)

c FIRAT UNIVERSITY (Turkey)

Author keywords

Atomic force microscopy (AFM); Electrical properties; Heterojunction; Semiconductors

Indexed keywords

ELECTRIC RESISTANCE; GOLD COMPOUNDS; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; INTERFACE STATES; MAGNETIC SEMICONDUCTORS; OXIDE FILMS; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ATOMIC FORCE MICROSCOPY; ATOMIC-FORCE-MICROSCOPY; BARRIER HEIGHTS; ETHYLENEDIOXYTHIOPHENES; HETEROJUNCTION DIODES; IDEALITY FACTORS; POLY(ETHYLENE GLYCOL); PROPERTY; SERIES RESISTANCES; SI SUBSTRATES;

ATOMIC FORCE MICROSCOPY;

EID: 84861760421 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2012.03.025 Document Type: Article

Times cited : (18)

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