Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

Optics Express

Volumn 18, Issue 15, 2010, Pages 15585-15590

  Yang, H Y ^a   Yu, S F ^a   Liang, H K ^a   Chen, T P ^a   Gao, J ^b   Wu, T ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROLUMINESCENCE; HETEROJUNCTIONS; INDIUM; LIGHT EMITTING DIODES; NANORODS; SILICON CARBIDE;

4H-SIC SUBSTRATE; EMISSION INTENSITY; EMISSION PEAKS; FORWARD BIAS; INTRINSIC DEFECTS; P-TYPE; RADIATIVE RECOMBINATION; ROOM TEMPERATURE; SN-DOPED;

TIN;

EID: 77954892982     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.015585     Document Type: Article

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