Carrier transport mechanism on ZnO nanorods/p-Si heterojunction diodes with various atmospheres annealing hydrothermal seed-layer

Thin Solid Films

Volumn 520, Issue 16, 2012, Pages 5409-5412

  Hwang, J D ^a   Chen, Y H ^a  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

Heterojunction diodes; Hydrothermal method; Ideality factor; Rectification ratio; Seed layer; ZnO nanorods

Indexed keywords

HETEROJUNCTION DIODES; HYDROTHERMAL METHODS; IDEALITY FACTORS; RECTIFICATION RATIO; SEED LAYER; ZNO NANOROD;

ANNEALING; DEFECT DENSITY; DEFECTS; HETEROJUNCTIONS; INTERFACE STATES; NANORODS; SEMICONDUCTOR DIODES; SILICON; VACUUM;

ZINC OXIDE;

EID: 84861750806     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.03.048     Document Type: Article

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