Fabrication and characterization of p-Si/n-ZnO heterostructured junctions

Microelectronics Journal

Volumn 40, Issue 4-5, 2009, Pages 706-710

  Klason, P ^a   Rahman, M M ^a   Hu, Q H ^a   Nur, O ^b   Turan, R ^c   Willander, M ^a,b  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Current voltage; Heterojunction; II VI semiconductor; Nanostructure; ZnO

Indexed keywords

BUFFER LAYERS; DISTILLATION; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; GROUND STATE; HETEROJUNCTIONS; NANORODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; ZINC OXIDE;

APPLIED VOLTAGES; CURRENT-VOLTAGE; ELECTROLUMINESCENCE EMISSIONS; FORWARD BIAS; IDEALITY FACTORS; II-VI SEMICONDUCTOR; NANODOTS; NANOROD DEVICES; NANOSTRUCTURE; ORDERS OF MAGNITUDES; P-N HETEROJUNCTIONS; RECTIFYING BEHAVIORS; REVERSE BIAS; REVERSE-SATURATION CURRENTS; ZNO; ZNO NANORODS;

ELECTRIC RECTIFIERS;

EID: 63749126317     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.070     Document Type: Article

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