Determination of the electronic parameters of nanostructure SnO2/p-Si diode

Microelectronic Engineering

Volumn 86, Issue 10, 2009, Pages 2072-2077

  Caglar, Yasemin ^a   Caglar, Mujdat ^a   Ilican, Saliha ^a   Yakuphanoglu, Fahrettin ^b  

^a ANADOLU UNIVERSITY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

Author keywords

Heterojunction diode; SnO2; Sol gel spin coating

Indexed keywords

BARRIER HEIGHTS; C-V MEASUREMENT; CAPACITANCE VOLTAGE CHARACTERISTIC; CONDUCTANCE TECHNIQUES; CURRENT VOLTAGE; ELECTRONIC PARAMETERS; HETEROJUNCTION DIODE; I-V MEASUREMENTS; IDEALITY FACTORS; INHOMOGENEITIES; INTERFACE STATE DENSITY; MICROSTRUCTURE PROPERTIES; OPTICAL ABSORPTION; OPTICAL BANDS; SCANNING ELECTRONS; SERIES RESISTANCE VALUES; SNO2; SOL-GEL SPIN COATING; SPATIAL DISTRIBUTION;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; GELATION; GELS; INTEGRATED OPTOELECTRONICS; NANOSTRUCTURES; OPTICAL MICROSCOPY; PARAMETER ESTIMATION; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; SIZE DISTRIBUTION; SOL-GEL PROCESS; SOL-GELS; SOLS; SPIN DYNAMICS;

OPTICAL FILMS;

EID: 67649995453     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.01.062     Document Type: Article

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