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Journal of Physics D: Applied Physics

Volumn 45, Issue 31, 2012, Pages

The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD

(8) Quemener, V a Alnes, M a Vines, L a Rauwel, P a Nilsen, O a Fjellvag H a Monakhov, E V a Svensson, B G a

a UNIVERSITY OF OSLO (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; CLASSICAL APPROACH; COLUMNAR GROWTH; CONSISTENT VALUES; CURRENT VOLTAGE; IDEALITY FACTORS; INTERFACIAL LAYER; P-TYPE SI; RANDOMLY ORIENTED GRAINS; SI SUBSTRATES; ZNO; ZNO FILMS; ZNO/P-SI;

ATOMIC LAYER DEPOSITION; HETEROJUNCTIONS; METALLIC FILMS; SUBSTRATES; THERMIONIC EMISSION; TRANSMISSION ELECTRON MICROSCOPY; WORK FUNCTION; ZINC OXIDE;

SILICON;

EID: 84864253550 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/31/315101 Document Type: Article

Times cited : (40)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.