n-ZnO nanorods/p-CuSCN heterojunction light-emitting diodes fabricated by electrochemical method

Electrochimica Acta

Volumn 55, Issue 17, 2010, Pages 4889-4894

  Zhang, Qiaobao ^a   Guo, Honghui ^a,b   Feng, Zengfang ^a   Lin, Lingling ^a   Zhou, Jianzhang ^a   Lin, Zhonghua ^a  

^a XIAMEN UNIVERSITY   (China)

^b Yunnan Institute of Geological Environment Monitoring   (China)

Author keywords

Electrochemical method; Heterojunction; Light emitting diodes; p CuSCN; ZnO nanorods

Indexed keywords

ELECTROCHEMICAL METHOD; ELECTROCHEMICAL METHODS; ELECTROLUMINESCENCE SPECTRA; ELECTRONS AND HOLES; FORWARD BIAS; GROWTH PROCESS; HETEROSTRUCTURE DEVICES; HETEROSTRUCTURES; HOLE-TRANSPORTING MATERIALS; IV CHARACTERISTICS; LOW TEMPERATURES; P-TYPE; PROCESSING PROCEDURES; RAMAN SPECTRA; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; SPECTRAL REGION; SURFACE STATE; ULTRAVIOLET EMISSION; VISIBLE EMISSIONS; ZNO; ZNO NANOROD;

DIODES; DISTILLATION; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; NANORODS; RAMAN SPECTROSCOPY; SURFACE DEFECTS; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 77953127794     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2010.03.082     Document Type: Article

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