N-ZnO nanowires/p-Si heterojunction with amorphous seed layer prepared by atomic layer deposition

ECS Solid State Letters

Volumn 2, Issue 4, 2013, Pages

  Cao, Cheng Wei ^a   Bao, Wei Ning ^a   Lin, Xi ^a   Liu, Xiao Yong ^a   Geng, Yang ^a   Lu, Hong Liang ^a   Sun, Qing Qing ^a   Zhou, Peng ^a   Zhang, David Wei ^a   Wang, Peng Fei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN CHARACTERISTICS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; HIGH CARRIER INJECTION; HYDROTHERMAL METHODS; ON/OFF CURRENT RATIO; X-RAY DIFFRACTION SPECTRUM; ZNO NANOWIRE ARRAYS;

ATOMIC LAYER DEPOSITION; DEPOSITION; HETEROJUNCTIONS; NANOWIRES; SILICON; X RAY DIFFRACTION; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 84880534385     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.006304ssl     Document Type: Article

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