Theoretical study of the gate leakage current in sub-10-nm field-effect transistors

IEEE Transactions on Electron Devices

Volumn 60, Issue 11, 2013, Pages 3862-3869

  Fischetti, Massimo V ^a   Fu, Bo ^a   Vandenberghe, William G ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

Gate leakage; quantum confinement; scaling

Indexed keywords

FIELD EFFECT TRANSISTOR (FETS); GATE LEAKAGES; GATE-LEAKAGE CURRENT; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; PSEUDOPOTENTIALS; SCALING; SEMICONDUCTOR CHANNELS; THEORETICAL STUDY;

ELECTRONIC STRUCTURE; LEAKAGE CURRENTS; NANOWIRES; QUANTUM CONFINEMENT;

FIELD EFFECT TRANSISTORS;

EID: 84887091847     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2280844     Document Type: Article

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