Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

Solid-State Electronics

Volumn 53, Issue 4, 2009, Pages 438-444

  Monaghan, S ^a   Hurley, P K ^a   Cherkaoui, K ^a   Negara, M A ^a   Schenk, A ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b ETH ZURICH   (Switzerland)

Author keywords

32 nm and 22 nm technology nodes; Bulk properties; Direct tunneling; Electron affinity; Electron effective mass; HfO2; High k gate stacks; Reverse modeling

Indexed keywords

ATOMIC LAYER DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAMS; ELECTRONS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; LOGIC GATES; MOSFET DEVICES; NANOTECHNOLOGY; OXIDE FILMS; QUANTUM CHEMISTRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SUBSTRATES;

32 NM AND 22 NM TECHNOLOGY NODES; BULK PROPERTIES; DIRECT TUNNELING; ELECTRON EFFECTIVE MASS; HFO2; HIGH-K GATE STACKS; REVERSE MODELING;

ELECTRON AFFINITY;

EID: 62849085730     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.018     Document Type: Article

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