A simple approach to quantum confinement in tunneling field-effect transistors

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1342-1344

  Padilla, J L ^a   Gamiz, F ^a   Godoy, A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Band to band tunneling; quantum confinement; tunneling field effect transistor (TFET)

Indexed keywords

BAND TO BAND TUNNELING; BOUND STATE; CARRIER INJECTION; DOUBLE-GATE; FORBIDDEN STATE; NONLOCAL; ONE DIMENSION; QUANTUM APPROACH; SIMPLE APPROACH; SUBBANDS; TOTAL CURRENT; TRANSFER CHARACTERISTICS; TUNNELING BARRIER; TUNNELING FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

QUANTUM CONFINEMENT;

EID: 84866910432     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2207876     Document Type: Article

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