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Volumn 109, Issue 9, 2011, Pages

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

(3) Kuyyalil, Jithesh a Tangi, Malleswararao a Shivaprasad, S M a

a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP VALUES; C-SAPPHIRE; CHARACTERIZATION TECHNIQUES; DIFFERENT SUBSTRATES; INN FILMS; MOSS-BURSTEIN SHIFT; N-DOPED; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; RICH CONDITIONS; SINGLE-CRYSTALLINE WURTZITE; SUBSTRATE TEMPERATURE;

ENERGY GAP; EPITAXIAL GROWTH; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR ORIENTATION; NITROGEN PLASMA; SEMICONDUCTING FILMS; STOICHIOMETRY; ZINC SULFIDE;

CRYSTAL ORIENTATION;

EID: 79959524906 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3580254 Document Type: Article

Times cited : (11)

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