InN: Fermi level stabilization by low-energy ion bombardment

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1841-1845

  Piper, L F J ^a   Veal, T D ^a   McConville, C F ^a   Lu, H ^b   Schaff, W J ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR-LIKE DEFECT-PROFILE; ELECTRON ACCUMULATION; LOW TEMPERATURE ANNEALING; NEAR-SURFACE ELECTRONIC PROPERTIES; 61.80.JK; 68.47.FG; 73.20.MF; 73.61.EY; 79.20.UV;

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRON ENERGY LOSS SPECTROSCOPY; FERMI LEVEL; ION BOMBARDMENT;

SEMICONDUCTING INDIUM COMPOUNDS; ION BOMBARDMENT;

EID: 33746424397     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565104     Document Type: Conference Paper

References (17)

1. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev et al., phys. stat. sol. (b) 229, R1 (2002).
2. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
3. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
4. H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 82, 1736 (2003).
5. I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004).
6. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
7. J. Tersoff, Phys. Rev. B 32, 6968(R) (1985).
8. I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, Hai Lu, W. J. Schaff J. Furthmüller, and F. Bechstedt, Phys. Rev. B 69, 201307(R) (2004).
9. W. Walukiewicz, Appl. Phys. Lett. 54, 2094 (1989).
10. S. X. Li, K. M. Yu, J. Wu, R. E. Jones, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, Hai Lu, and W. J. Schaff, Phys. Rev. B 71, 161201(R) (2005).
11. W. J. Schaff, H. Lu, L. F. Eastman, W. Walukiewicz, K. M. Yu et al., State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V, Vol. 2004-06, edited by H. M. Ng and A. G. Baca (The Electrochemical Society Proceedings Series, 2004), pp. 358-371.
12. L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, Hai Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 23, 617 (2005).
13. L. F. J. Piper, T. D. Veal, I. Mahboob, C. F. McConville, Hai Lu, and W. J. Schaff, Phys. Rev. B 70, 115333 (2004).
14. Ph. Lambin, J. P. Vigneron, and A. A. Lucas, Phys. Rev. B 32, 8203 (1985);
15. Ph. Lambin, J. P. Vigneron, and A. A. Lucas, Comput. Phys. Commun. 60, 351 (1990).
16. J. P. Zöllner, H. Übensee, G. Paasch, T. Fiedler, and G. Gobsch, phys. stat. sol. (b) 137, 837 (1986);
17. H. Übensee, G. Paasch, and J. P. Zöllner, Phys. Rev. B 39, 1955 (1989).