The influence of conduction band plasmons on core-level photoemission spectra of InN

Surface Science

Volumn 602, Issue 4, 2008, Pages 871-875

  King, P D C ^a   Veal, T D ^a   Lu, Hai ^b   Hatfield, S A ^a   Schaff, W J ^b   McConville, C F ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b Cornell University   (United States)

Author keywords

Conduction band plasmon; Core level lineshape; Electron accumulation; Indium nitride; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; CARRIER CONCENTRATION; CONDUCTION BANDS; FERMI LEVEL; PLASMONS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTION BAND PLASMONS; CORE-LEVEL LINESHAPE; ELECTRON ACCUMULATION; INDIUM NITRIDE; INELASTIC LOSSES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 39149103990     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.12.026     Document Type: Article

References (35)

1. Segev D., and Van de Walle C.G. Surf. Sci. 601 (2007) L15
2. Veal T.D., King P.D.C., Jefferson P.H., Piper L.F.J., McConville C.F., Lu H., Schaff W.J., Anderson P.A., Durbin S.M., Muto D., Naoi H., and Nanishi Y. Phys. Rev. B 76 (2007) 075313
3. Veal T.D., King P.D.C., Walker M., McConville C.F., Lu H., and Schaff W.J. Physica B 401-402 (2007) 351
4. Muto D., Araki T., Naoi H., Matsuda F., and Nanishi Y. Phys. Stat. Sol. A 202 (2005) 773
5. Segev D., and Van de Walle C.G. Europhys. Lett. 76 (2006) 305
6. Van de Walle C.G., and Segev D. J. Appl. Phys. 101 (2007) 081704
7. Lu H., Schaff W.J., Eastman L.F., and Stutz C.E. Appl. Phys. Lett. 82 (2003) 1736
8. Mahboob I., Veal T.D., McConville C.F., Lu H., and Schaff W.J. Phys. Rev. Lett. 92 (2004) 036804
9. Piper L.F.J., Veal T.D., Jefferson P.H., McConville C.F., Fuchs F., Furthmüller J., Bechstedt F., Lu H., and Schaff W.J. Phys. Rev. B 72 (2005) 245319
10. King P.D.C., Veal T.D., McConville C.F., Fuchs F., Furthmüller J., Bechstedt F., Schley P., Goldhahm R., Schörmann J., As D.J., Lischka K., Muto D., Naoi H., Lu H., and Schaff W.J. Appl. Phys. Lett. 91 (2007) 092101
11. Shih C.F., Chen N.C., Chang P.H., and Liu K.S. Jpn. J. Appl. Phys. - Part 1 44 (2005) 7892
12. King P.D.C., Veal T.D., Jefferson P.H., McConville C.F., Wang T., Parbrook P.J., Lu H., and Schaff W.J. Appl. Phys. Lett. 90 (2007) 132105
13. Lebedev V., Wang C.Y., Cimalla V., Hauguth S., Kups T., Ali M., Ecke G., Himmerlich M., Krischok S., Schaefer J.A., Ambacher O., Polyakov V.M., and Schwierz F. J. Appl. Phys. 101 (2007) 123705
14. Lee I., Yu C., Shin H.-J., Kim J.-Y., Lee Y., Hur T.-B., and Kim H.-K. Thin Solid Films 515 (2007) 4691
15. Lee I.J., Kim J.Y., Shin H.J., and Kim H.K. J. Appl. Phys. 95 (2004) 5540
16. Butcher K.S.A., Fernandes A.J., Chen P.P.-T., Wintrebert-Fouquet M., Timmers H., Shrestha S.K., Hirshy H., Perks R.M., and Usher B.F. J. Appl. Phys. 101 (2007) 123702
17. Himmerlich M., Krischok S., Lebedev V., Ambacher O., and Schaefer J. J. Cryst. Growth 306 (2007) 6
18. Woodruff D.P., and Delchar T.A. Modern Techniques of Surface Science. second ed. (1994), Cambridge University Press, Cambridge
19. Egdell R.G., Walker T.J., and Beamson G. J. Electron Spectrosc. Relat. Phenom. 128 (2003) 59
20. Egdell R.G., Rebane J., Walker T.J., and Law D.S.L. Phys. Rev. B 59 (1999) 1792
21. Christou V., Etchells M., Renault O., Dobson P.J., Salata O.V., Beamson G., and Egdell R.G. J. Appl. Phys. 88 (2000) 5180
22. Payne D., Egdell R., Hao W., Foord J., Walsh A., and Watson G. Chem. Phys. Lett. 411 (2005) 181
23. W.J. Schaff, H. Lu, L.F. Eastman, W. Walukiewicz, K.M. Yu, S. Keller, S. Kurtz, B. Keyes, L. Gevilas, Electrical properties of InN grown by Molecular Beam Epitaxy, in: H.M. Ng, A.G. Baca (Eds.), State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V, vol. 2004-06 of The Electrochemical Society Proceedings Series, Honolulu, Hawaii, 3-8 October 2004, Electrochemical Society, Pennington, NJ, 2004, pp. 358-371.
24. Walukiewicz W., Ager III J.W., Yu K.M., Liliental-Weber Z., Wu J., Li S.X., Jones R.E., and Denlinger J.D. J. Phys. D: Appl. Phys. 39 (2006) R83
25. Piper L.F.J., Veal T.D., Walker M., Mahboob I., McConville C.F., Lu H., and Schaff W.J. J. Vac. Sci. Technol. A 23 (2005) 617
26. Chambers S.A., Droubay T., Kaspar T.C., and Gutowski M. J. Vac. Sci. Technol. B 22 (2004) 2205
27. Persson C., and Zunger A. Phys. Rev. B 68 (2003) 073205
28. Veal T.D., Piper L.F.J., Schaff W.J., and McConville C.F. J. Cryst. Growth 288 (2006) 268
29. Mahboob I., Veal T.D., Piper L.F.J., McConville C.F., Lu H., Schaff W.J., Furthmüller J., and Bechstedt F. Phys. Rev. B 69 (2004) 201307R
30. Rodriguez J.A., Jirsak T., Sambasivan S., Fischer D., and Maiti A. J. Chem. Phys. 112 (2000) 9929
31. Hecht J.-D., Frost F., Sidorenko A., Hirsch D., Neumann H., Schindler A., Krasnikow S., Zhang L., and Chassé T. Solid-State Electron. 47 (2003) 413
32. Veal T.D., Mahboob I., McConville C.F., Burke T.M., and Ashley T. Appl. Phys. Lett. 83 (2003) 1776
33. Hecht J.-D., Frost F., Chassé T., Hirsch D., Neumann H., Schindler A., and Bigl F. Appl. Surf. Sci. 179 (2001) 196
34. Hecht J.-D., Frost F., Hirsch D., Neumann H., Schindler A., Preobrajenski A.B., and Chassé T. J. Appl. Phys. 90 (2001) 6066
35. Hegde R.I., Tobin P.J., Reid K.G., Maiti B., and Ajuria S.A. Appl. Phys. Lett. 66 (1995) 2882