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Volumn 98, Issue 6, 2011, Pages

InN/InGaN multiple quantum wells emitting at 1.5μm grown by molecular beam epitaxy

(9) Grandal, J a,c Pereiro, J a,d,e Bengoechea Encabo, A a Fernandez Garrido S a,b Sanchez Garcia M A a Munoz E a Calleja, E a Luna, E b Trampert, A b

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

c Ohio State University (United States)

d NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

e BROOKHAVEN NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; QUANTUM THEORY; SEMICONDUCTOR ALLOYS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BIAXIAL COMPRESSION; GAN TEMPLATE; LOCALIZED STATE; LOW TEMPERATURES; PHOTOLUMINESCENCE MEASUREMENTS; SATELLITE PEAKS; SECOND ORDERS; THICKNESS FLUCTUATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79951778999 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3552195 Document Type: Article

Times cited : (24)

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