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Applied Physics Letters

Volumn 100, Issue 16, 2012, Pages

Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy

(5) Millot, Marius a Geballe, Zachary M a Yu, Kin M b Walukiewicz, Wladek b Jeanloz, Raymond a

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION AND PHOTOLUMINESCENCE; ABSORPTION EDGES; COMPOSITION RANGES; FUNDAMENTAL BAND GAP; HIGH PRESSURE; HIGH-PRESSURE OPTICAL SPECTROSCOPY; INDIUM CONTENT; INDIUM GALLIUM NITRIDE; INGAN EPILAYERS; LOCALIZED DEFECTS; PHOTOLUMINESCENCE PEAK ENERGY; PRESSURE COEFFICIENTS; PRESSURE DEPENDENCE; STABILIZATION ENERGY;

ENERGY GAP; GALLIUM NITRIDE; INDIUM; PHOTOLUMINESCENCE;

INDIUM ALLOYS;

EID: 84859986509 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4704367 Document Type: Article

Times cited : (18)

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