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Volumn 114, Issue 15, 2013, Pages

Effects of exciton localization on internal quantum efficiency of InGaN nanowires

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC ENERGY; DENSITY OF LOCALIZED STATE; EMISSION WAVELENGTH; EXCITATION POWER DENSITY; EXCITON LOCALIZATION; INCREASING TEMPERATURES; INTERNAL QUANTUM EFFICIENCY; TEMPERATURE DEPENDENT;

EID: 84886462891     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4825124     Document Type: Article
Times cited : (44)

References (35)
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    • 10.1063/1.1567055
    • P. G. Eliseev, J. Appl. Phys. 93, 5404 (2003). 10.1063/1.1567055
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    • Eliseev, P.G.1
  • 14
    • 49949133713 scopus 로고
    • 10.1016/0031-8914(67)90062-6
    • Y. P. Varshni, Physica 34, 149 (1967). 10.1016/0031-8914(67)90062-6
    • (1967) Physica , vol.34 , pp. 149
    • Varshni, Y.P.1
  • 16
    • 0039921930 scopus 로고    scopus 로고
    • 10.1002 /1521-3951 (199703) 200:1<155::AID-PSSB155>3.0.CO;2-3
    • R. Pässler, Phys. Status Solidi B 200, 155 (1997). 10.1002/1521-3951(199703)200:1<155::AID-PSSB155>3.0.CO;2-3
    • (1997) Phys. Status Solidi B , vol.200 , pp. 155
    • Pässler, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.