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Volumn 52, Issue 8 PART 2, 2013, Pages

Emission wavelength dependence of internal quantum efficiency in InGaN nanowires

(9) Murotani, Hideaki a Andoh, Hiroya a Tsukamoto, Takehiko a Sugiura, Toko a Yamada, Yoichi b Tabata, Takuya c Honda, Yoshio c Yamaguchi, Masatoshi c Amano, Hiroshi c

a TOYOTA NATIONAL COLLEGE OF TECHNOLOGY (Japan)

b YAMAGUCHI UNIVERSITY (Japan)

c NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECTS; EMISSION WAVELENGTH; EXCITATION CONDITIONS; EXCITATION POWER DENSITY; EXCITON LOCALIZATION; INTERNAL QUANTUM EFFICIENCY; LOW TEMPERATURES; NONRADIATIVE RECOMBINATION PROCESS;

NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; TEMPERATURE;

QUANTUM EFFICIENCY;

EID: 84880172002 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.08JE10 Document Type: Article

Times cited : (9)

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