Carrier localization degree of In0.2 Ga0.8 N/GaN multiple quantum wells grown on vicinal sapphire substrates

Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

  Li, Zhen Yu ^a   Lo, Ming Hua ^a   Chiu, Ching Hua ^a   Lin, Po Chun ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT-EMITTING; CARRIER LOCALIZATION; CRYSTAL QUALITIES; DISLOCATION DENSITIES; EPITAXIAL STRUCTURE; GAN LAYERS; IN-PLANE; LOW PRESSURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; OPTICAL ANALYSIS; RAMAN SPECTRUM; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; THREADING DISLOCATION DENSITIES; TRANSMISSION ELECTRON MICROSCOPY IMAGES; VICINAL ANGLE; VICINAL SAPPHIRE; VICINAL SUBSTRATES;

CORUNDUM; DISLOCATIONS (CRYSTALS); GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; TIME DIVISION MULTIPLEXING; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 67649813783     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3055264     Document Type: Article

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