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Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

(6) Murotani, Hideaki a,c Akase, Daiki a Anai, Koji a Yamada, Yoichi a Miyake, Hideto b Hiramatsu, Kazumasa b

a YAMAGUCHI UNIVERSITY (Japan)

b MIE UNIVERSITY (Japan)

c TOYOTA NATIONAL COLLEGE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-RICH ALGAN; ALGAN QUANTUM WELLS; BARRIER LAYERS; INTERFACE QUALITY; INTERNAL QUANTUM EFFICIENCY; SI CONCENTRATION;

PHOTOLUMINESCENCE SPECTROSCOPY; POINT DEFECTS; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS;

SILICON;

EID: 84864463075 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4739431 Document Type: Article

Times cited : (55)

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