Internal quantum efficiency and nonradiative recombination rate in InGaN-based near-ultraviolet light-emitting diodes

Japanese Journal of Applied Physics

Volumn 51, Issue 7 PART 1, 2012, Pages

  Kohno, Takakazu ^a   Sudo, Yasuhiro ^a   Yamauchi, Masaki ^a   Mitsui, Kazuya ^a   Kudo, Hiromitsu ^b   Okagawa, Hiroaki ^b   Yamada, Yoichi ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CLADDING LAYER; DIFFERENT SUBSTRATES; EXCITATION CONDITIONS; INTERNAL QUANTUM EFFICIENCY; NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE RECOMBINATION RATES; PL SPECTROSCOPY; SELECTIVE EXCITATIONS; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THREADING DISLOCATION DENSITIES; TIME-RESOLVED;

GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE;

LIGHT EMITTING DIODES;

EID: 84863789114     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.072102     Document Type: Article

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