Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment

Journal of Applied Physics

Volumn 112, Issue 12, 2012, Pages

  Huang, Hsin Wei ^a   Chang, Wen Chih ^a   Lin, Su Jien ^a   Chueh, Yu Lun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM COATINGS; ALUMINUM OXIDE; ANODIC OXIDATION; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; DISSOCIATION; FILM GROWTH; II-VI SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; IONIZATION OF GASES; LIGANDS; METALLIC FILMS; MOLECULES; OXIDE FILMS; OXIDE MINERALS; PLASMA APPLICATIONS; ZINC OXIDE;

ANODIC ALUMINUM OXIDE; DISSOCIATION PROCESS; FORMATION MECHANISM; INTRINSIC DEFECTS; LIGAND EXCHANGE REACTIONS; REMOTE PLASMA TREATMENT; STERIC HINDRANCES; UNIFORM COATING;

ATOMIC LAYER DEPOSITION;

EID: 84886447398     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768839     Document Type: Article

References (42)

1. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003). 10.1063/1.1542677
2. S. K. Hazra and S. Basu, Solid State Electron. 49, 1158 (2005). 10.1016/j.sse.2005.04.015
3. S. Major and K. L. Chopra, Sol. Energy Mater. 17, 319 (1988). 10.1016/0165-1633(88)90014-7
4. S. J. Pearton, D. P. Norton, K. Ip, and Y. W. Keo, J. Vac. Sci. Technol. B 22, 932 (2004). 10.1116/1.1714985
5. W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, Appl. Phys. Lett. 92, 022110 (2008). 10.1063/1.2834852
6. C. Platzer-Björkman, J. Lu, J. Kessler, and L. Stolt, Thin Solid Films 431-432, 321 (2003). 10.1016/S0040-6090(03)00229-3
7. E. B. Yousfi, B. Weinberger, F. Donsanti, R. Cowache, and D. Lincot, Thin Solid Films 387, 29 (2001). 10.1016/S0040-6090(00)01838-1
8. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S.-J. Cho, and H. Morkoc, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666
9. J. H. Choi, Y. Mao, and J. P. Chang, Mater. Sci. Eng. R 72, 97 (2011). 10.1016/j.mser.2010.12.001
10. N. Nepal, N. Y. Garces, D. J. Meyer, J. K. Hite, M. A. Mastro, and C. R. Eddy, Appl. Phys. Express 4, 055802 (2011). 10.1143/APEX.4.055802
11. M. H. Lin, C. H. Hou, J. Y. Wu, and T. B. Wu, J. Electrochem. Soc. 158, H221 (2011). 10.1149/1.3526310
12. C. C. Lien, C. Y. Wu, Z. Q. Li, and J. J. Lin, J. Appl. Phys. 110, 063706 (2011). 10.1063/1.3638120
13. H. Endo, T. Chiba, K. Meguro, K. Takahashi, K. Fujisawa, S. Sugimura, S. Narita, Y. Kashiwaba, and E. Sato, Nucl. Instrum. Methods Phys. Res. A 665, 15 (2011). 10.1016/j.nima.2011.11.009
14. M. Girtan, M. Kompitsas, R. Mallet, and I. Fasaki, Eur. Phys. J.: Appl. Phys. 51, 33212 (2010). 10.1051/epjap/2010112
15. L. I. Burova, N. S. Perov, A. S. Semisalova, V. A. Kulbachinskii, V. G. Kytin, V. V. Roddatis, A. L. Vasiliev, and A. R. Kaul, Thin Solid Films 520, 4580 (2012). 10.1016/j.tsf.2011.10.198
16. S. O'Brien, M. Çopuroglu, P. Tassie, M. G. Nolan, J. A. Hamilton, I. Povey, L. Pereira, R. Martins, E. Fortunato, and M. E. Pemble, Thin Solid Films 520, 1174 (2011). 10.1016/j.tsf.2011.04.210
17. Zinc Oxide Bulk, Thin Films and Nanostructures, edited by, C. Jagadish, and, S. J. Pearton, (Elsevier's Science Technology Rights, Netherlands, 2006).
18. N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, and V. Osinniy, Appl. Phys. Lett. 92, 023502 (2008). 10.1063/1.2830940
19. D. H. Levy and S. F. Nelson, J. Vac. Sci. Technol. A 30, 018501 (2012). 10.1116/1.3670748
20. S. J. Lim, S. Kwon, and H. Kim, Thin Solid Films 516, 1523 (2008). 10.1016/j.tsf.2007.03.144
21. H. Makino, A. Miyake, T. Yamada, N. Yamamoto, and T. Yamamoto, Thin Solid Films 517, 3138 (2009). 10.1016/j.tsf.2008.11.088
22. S. Lee, S. Bang, J. Park, S. Park, W. Jeong, and H. Jeon, Phys. Status Solidi A 207, 1845 (2010). 10.1002/pssa.200925514
23. M. Godlewski, E. Guziewicz, G. Luka, T. Krajewski, M. Lukasiewicz, L. Wachnicki, A. Wachnicka, K. Kopalko, A. Sarem, and B. Dalati, Thin Solid Films 518, 1145 (2009). 10.1016/j.tsf.2009.04.066
24. S. H. K. Park, C. S. Hwang, H. Y. Jeong, H. Y. Chu, and K. I. Cho, Electrochem. Solid-State Lett. 11, H10 (2008). 10.1149/1.2801017
25. D. A. Mourey, D. A. L. Zhao, J. Sun, and T. N. Jackson, IEEE Trans. Electron Devices 57, 530 (2010). 10.1109/TED.2009.2037178
26. R. L. Puurunen, Chem. Vap. Deposition 9, 249 (2003). 10.1002/cvde. 200306265
27. E. Guziewicz, I. A. Kowalik, M. Godlewski, K. Kopalko, V. Osinniy, A. Wójcik, S. Yatsunenko, E. Łusakowska, W. Paszkowicz, and M. Guziewicz, J. Appl. Phys. 103, 033515 (2008). 10.1063/1.2836819
28. S. M. George, Chem. Rev. 110, 111 (2010). 10.1021/cr900056b
29. D. H. Zhang and H. L. Ma, Appl. Phys. A 62, 487 (1996). 10.1007/BF01567122
30. S. Bandyopadhyay, G. K. Paul, R. Roya, S. K. Sen, and S. Sen, Mater. Chem. Phys. 74, 83 (2002). 10.1016/S0254-0584(01)00402-3
31. J. He, J. Liu, J. Hu, R. Zeng, and W. Long, J. Eur. Ceram. Soc. 31, 1451 (2011). 10.1016/j.jeurceramsoc.2011.01.024
32. F. Oba, S. R. Nishitani, S. Isotani, H. Adachi, and I. Tanaka, J. Appl. Phys. 90, 824 (2001). 10.1063/1.1380994
33. J. H. Lee, K. H. Ko, and B. O. Park, J. Cryst. Growth 247, 119 (2003). 10.1016/S0022-0248(02)01907-3
34. E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, L. Pereira, and R. Martins, Thin Solid Films 487, 205 (2005). 10.1016/j.tsf.2005.01.066
35. A. L. Fahrenbruch and R. H. Bube, Fundamentals of Solar Cells (Academic, New York, 1993).
36. L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. Zhang, R. J. Saykally, and P. Yang, Angew. Chem., Int. Ed. 42, 3031 (2003). 10.1002/anie.200351461
37. A. B. Djurišić, Y. H. Leung, K. H. Tam, L. Ding, W. K. Ge, H. Y. Chen, and S. Gwo, Appl. Phys. Lett. 88, 103107 (2006). 10.1063/1.2182096
38. A. B. Djurišić and Y. H. Leung, Small 2, 944 (2006). 10.1002/smll.200600134
39. S. M. Smith and H. B. Schlegel, Chem. Mater. 15, 162 (2003). 10.1021/cm020726p
40. A. C. Dillon, A. W. Ott, J. D. Way, and S. M. George, Surf. Sci. 322, 230 (1995). 10.1016/0039-6028(95)90033-0
41. R. L. Puurunen, Chem. Vap. Deposition 10, 159 (2004). 10.1002/cvde.200306283
42. M. Putkonen, J. Niinistö, K. Kukli, T. Sajavaara, M. Karppinen, H. Yamauchi, and L. Niinistö, Chem. Vap. Deposition 9, 207 (2003). 10.1002/cvde.200306254