Thermal stability improvement via Cyclic D2 O radical anneal interposed in atomic layer deposition process

Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

  Lin, M H ^a   Hou, C H ^a   Wu, J Y ^a   Wu, T B ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; EQUIVALENT OXIDE THICKNESS; O RADICALS; POST-DEPOSITION ANNEAL; THERMAL STABILITY;

ATOMIC LAYER DEPOSITION; GATES (TRANSISTOR); HAFNIUM; THERMODYNAMIC STABILITY;

GATE DIELECTRICS;

EID: 79551586227     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3526310     Document Type: Article

References (11)

1. A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, Thin Solid Films, 292, 135 (1997). 10.1016/S0040-6090(96)08934-1
2. M. M. Frank, Y. J. Chabal, and G. D. Wilk, Appl. Phys. Lett., 82, 4758 (2003). 10.1063/1.1585129
3. M. H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett., 81, 472 (2002). 10.1063/1.1487923
4. J. Park, M. Cho, S. K. Kim, T. J. Park, S. W. Lee, S. H. Hong, and C. S. Hwang, Appl. Phys. Lett., 86, 112907 (2005). 10.1063/1.1885167 (Pubitemid 40597039)
5. T. J. Park, J. H. Kim, M. H. Seo, J. H. Jang, and C. S. Hwang, Appl. Phys. Lett., 90, 152906 (2007). 10.1063/1.2721845 (Pubitemid 46609868)
6. K. Tomida, K. Kita, and A. Toriumi, Appl. Phys. Lett., 89, 142902 (2006). 10.1063/1.2355471 (Pubitemid 44522240)
7. K. Torii, T. Kawahara, and K. Shiraishi, IEEE Electron Device Lett., 26, 722 (2005). 10.1109/LED.2005.855416 (Pubitemid 41488883)
8. M. M. Frank, Y. J. Chabal, M. L. Green, A. Delabie, B. Brijs, G. D. Wilk, M.-Y. Ho, E. B. O. da Rosa, I. J. R. Baumvol, and F. C. Stedile, Appl. Phys. Lett., 83, 740 (2003). 10.1063/1.1595719
9. T. T. Van, J. P. Chang, Appl. Surf. Sci., 246, 250 (2005). 10.1016/j.apsusc.2004.11.025 (Pubitemid 40574332)
10. Y. Watanabe, H. Ota, S. Migit, Y. Kamimuta, K. Iwamoto, M. Takahashi, A. Ogawa, H. Ito, T. Nabatame, and A. Toriumi, ECS. Trans., 11 (4), 35 (2007). 10.1149/1.2779546
11. J. R. Hauser and K. Ahmed, Characterization and Metrology for ULSI Technology, AIP Conf. Proc. 449, 235-239 (AIP, New York, 1998).