SCOPUS 정보 검색 플랫폼

Volumn 114, Issue 10, 2013, Pages

High carrier mobility and electrical stability under negative bias illumination stress of ZnO thin-film transistors with N2O plasma treated HfOx gate dielectrics

(3) Chen, Wei Yu a Jeng, Jiann Shing b Chen, Jen Sue a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL UNIVERSITY OF TAINAN (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDING STATE; DIELECTRIC SURFACE; ELECTRICAL STABILITY; HIGH CARRIER MOBILITY; LOW OPERATING VOLTAGE; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

GATE DIELECTRICS; HAFNIUM OXIDES; INTERFACE STATES; PHOTOELECTRONS; PLASMA APPLICATIONS; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

PLASMA STABILITY;

EID: 84884934860 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4820944 Document Type: Article

Times cited : (4)

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