Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications

Journal of Physics D: Applied Physics

Volumn 42, Issue 21, 2009, Pages

  Yuan, Longyan ^a   Fang, Guojia ^a   Zou, Xiao ^a   Huang, Huihui ^a   Zou, Hai ^a   Han, Xiangyun ^b   Gao, Yihua ^b   Xu, Sheng ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DIELECTRIC LAYER; HIGH MOBILITY; ON/OFF RATIO; OPTICAL AND ELECTRICAL CHARACTERIZATION; ROOM TEMPERATURE; SATURATION MOBILITY; TIO;

BARIUM; DEPOSITION; FUSED SILICA; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; PULSED LASER DEPOSITION; SILICA; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS FILMS;

EID: 70450203857     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/21/215301     Document Type: Article

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