Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

Applied Surface Science

Volumn 257, Issue 24, 2011, Pages 10721-10724

  Huang, H Q ^a   Liu, F J ^a   Sun, J ^a   Zhao, J W ^a   Hu, Z F ^a   Li, Z J ^a   Zhang, X Q ^a   Wang, Y S ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

Electrical property; MBE; MgO buffer layer; MgZnO; Thin film transistor

Indexed keywords

BUFFER LAYERS; ELECTRIC PROPERTIES; FABRICATION; FILM THICKNESS; MAGNESIA; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL WAVEGUIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR ALLOYS; SILICA; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; X RAY DIFFRACTION;

BUFFER LAYER THICKNESS; CRYSTAL QUALITIES; ELECTRICAL CHARACTERISTIC; ENHANCEMENT MODES; FIELD-EFFECT MOBILITIES; MGO BUFFER LAYER; MGZNO; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

BORON COMPOUNDS;

EID: 80052940670     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.07.086     Document Type: Article

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