Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 2, 1997, Pages 661-666

  Lau, Wai Shing ^a   Qian, Peng Wei ^a   Sandler, Nathan P ^a,b   McKinley, Kevin A ^a,b   Chu, Paul K ^a,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b LAM RESEARCH CORPORATION   (United States)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Chemical vapor deposition (CVD); Cross sectional transmission electron microscopy (XTEM); Leakage current; Rapid thermal annealing (RTA); Secondary ion mass spectrometry (SIMS); Tantalum pentoxide (Ta2O5)

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); TANTALUM PENTOXIDE;

ANNEALING; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITROGEN OXIDES; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITORS;

EID: 0031070413     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.661     Document Type: Article

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