Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors

Thin Solid Films

Volumn 520, Issue 10, 2012, Pages 3783-3786

  Yoo, Dong Youn ^a,b   Chong, Eugene ^a,d   Kim, Do Hyung ^c   Ju, Byeong Kwon ^b   Lee, Sang Yeol ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Chongju University   (South Korea)

^d University of Science and Technology (UST)   (South Korea)

Author keywords

a IGZO; MgO; Passivation; Stability

Indexed keywords

A-IGZO; AMORPHOUS INGAZNO; BACK CHANNELS; BIAS TEMPERATURE STRESS; DEPTH PROFILE; HUMIDITY TESTS; INDIUM GALLIUM ZINC OXIDES (IGZO); MGO; PASSIVATION LAYER; POSITIVE BIAS; POSITIVE BIAS TEMPERATURES; THIN-FILM TRANSISTOR (TFTS);

CONVERGENCE OF NUMERICAL METHODS; DRIERS (MATERIALS); GALLIUM; MAGNESIUM; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

PASSIVATION;

EID: 84858341458     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.065     Document Type: Conference Paper

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