Electric stress-induced threshold voltage instability of multilayer MoS2 field effect transistors

ACS Nano

Volumn 7, Issue 9, 2013, Pages 7751-7758

  Cho, Kyungjune ^a   Park, Woanseo ^a   Park, Juhun ^a   Jeong, Hyunhak ^a   Jang, Jingon ^a   Kim, Tae Young ^a   Hong, Woong Ki ^b   Hong, Seunghun ^a   Lee, Takhee ^a  

^a Seoul National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

electronic transport; field effect transistor; gate bias stress; molybdenum disulfide

Indexed keywords

AMBIENT ENVIRONMENT; ELECTRICAL STABILITY; ELECTRONIC TRANSPORT; ELECTRONICS APPLICATIONS; FIELD EFFECT TRANSISTOR (FETS); GATE-BIAS STRESS; MOLYBDENUM DISULFIDE; THRESHOLD-VOLTAGE INSTABILITIES;

MOLYBDENUM COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 84884917712     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn402348r     Document Type: Article

References (42)

1. Novoselov, K.; Geim, A. K.; Morozov, S.; Jiang, D.; Zhang, Y.; Dubonos, S.; Grigorieva, I.; Firsov, A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
2. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451-10453
3. Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors Science 2008, 319, 1229-1232
4. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
5. Kam, K.; Parkinson, B. Detailed Photocurrent Spectroscopy of the Semiconducting Group VIB Transition Metal Dichalcogenides J. Phys. Chem. 1982, 86, 463-467
6. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
7. 2 ACS Nano 2011, 5, 9703-9709
8. 2 Nanosheets Adv. Mater. 2012, 24, 772-775
9. 2 Nano Lett. 2011, 11, 5111-5116
10. 2 Nano Res. 2012, 5, 43-48
11. 2 Nano Lett. 2013, 13, 668-673
12. 2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel Small 2012, 8, 3111-3115
13. 2 Transistors Nano Lett. 2012, 12, 4674-4680
14. 2 and Graphene Oxide as the Active Layer Small 2013, 9, 727-731
15. 2 ACS Nano 2011, 5, 9934-9938
16. 2 Phototransistors with Spectral Response from Ultraviolet to Infrared Adv. Mater. 2012, 24, 5832-5836
17. 2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature Small 2012, 8, 63-67
18. 2 Crystals Nat. Commun. 2012, 3, 1011
19. Park, W.; Park, J.; Jang, J.; Lee, H.; Jeong, H.; Cho, K.; Hong, S.; Lee, T. Oxygen Environmental and Passivation Effects on Molybdenum Disulfide Field Effect Transistors Nanotechnology 2013, 24, 095202
20. 2 Basal Plane Surfaces Appl. Surf. Sci. 1984, 20, 193-198
21. 2 Field Effect Transistors ACS Nano 2012, 6, 5635-5641
22. 2 Field-Effect Transistors and the Effect of Ambient on their Performances Appl. Phys. Lett. 2012, 100, 123104
23. Pierret, R. F. Semiconductor Device Fundamentals; Addison Wesley, 1996.
24. 2 Transistors Be? Nano Lett. 2011, 11, 3768-3773
25. 2 MOSFETs ACS Nano 2012, 6, 8563-8569
26. Arora, N. MOSFET Models for VLSI Circuit Simulation: Theory and Practice; Springer: Berlin, 1993.
27. Maeng, J.; Jo, G.; Kwon, S.-S.; Song, S.; Seo, J.; Kang, S.-J.; Kim, D.-Y.; Lee, T. Effect of Gate Bias Sweep Rate on the Electronic Properties of ZnO Nanowire Field-Effect Transistors under Different Environments Appl. Phys. Lett. 2008, 92, 233120
28. Choe, M.; Park, W.; Kang, J. W.; Jeong, S.; Hong, W. K.; Lee, B. H.; Park, S. J.; Lee, T. Investigation of Threshold Voltage Instability Induced by Gate Bias Stress in ZnO Nanowire Field Effect Transistors Nanotechnology 2012, 23, 485201
29. Jeong, J. K.; Won Yang, H.; Jeong, J. H.; Mo, Y.-G.; Kim, H. D. Origin of Threshold Voltage Instability in Indium-Gallium-Zinc Oxide Thin Film Transistors Appl. Phys. Lett. 2008, 93, 123508
30. Suresh, A.; Muth, J. F. Bias Stress Stability of Indium Gallium Zinc Oxide Channel Based Transparent Thin Film Transistors Appl. Phys. Lett. 2008, 92, 033502
31. Lee, J.-M.; Cho, I.-T.; Lee, J.-H.; Kwon, H.-I. Bias-Stress-Induced Stretched-Exponential Time Dependence of Threshold Voltage Shift in InGaZnO Thin Film Transistors Appl. Phys. Lett. 2008, 93, 093504
32. Chang, E.; Cibuzar, G.; Pande, K. Passivation of GaAs FET's with PECVD Silicon Nitride Films of Different Stress States IEEE Trans. Electron Devices 1988, 35, 1412-1418
33. Sato, Y.; Takai, K.; Enoki, T. Electrically Controlled Adsorption of Oxygen in Bilayer Graphene Devices Nano Lett. 2011, 11, 3468-3475
34. Powell, M. J. The Physics of Amorphous-Silicon Thin-Film Transistors IEEE Trans. Electron Devices 1989, 36, 2753-2763
35. Jahinuzzaman, S. M.; Sultana, A.; Sakariya, K.; Servati, P.; Nathan, A. Threshold Voltage Instability of Amorphous Silicon Thin-Film Transistors under Constant Current Stress Appl. Phys. Lett. 2005, 87, 023502
36. Lelis, A. J; Habersat, D.; Green, R.; Ogunniyi, A.; Gurfinkel, M.; Suehle, J.; Goldsman, N. Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements IEEE Trans. Electron Devices 2008, 55, 1835-1840
37. 2 Phys. Rev. B 2011, 84, 045409
38. 2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105
39. 2 Thin Layers on Insulating Substrates Nano Lett. 2012, 12, 1538-1544
40. 2 ACS Nano 2008, 2, 1571-1580
41. 2 Monolayers: A Computational Study Phys. Rev. Lett. 2012, 108, 156802
42. 2 Field-Effect Transistors ACS Nano 2011, 5, 7707-7712