Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

Applied Physics Letters

Volumn 92, Issue 23, 2008, Pages

  Maeng, Jongsun ^a   Jo, Gunho ^a   Kwon, Soon Shin ^a   Song, Sunghoon ^a   Seo, Jaeduck ^a   Kang, Seok Ju ^a   Kim, Dong Yu ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ELECTRIC WIRE; ELECTRONIC PROPERTIES; GAS ADSORPTION; MESFET DEVICES; NANOSTRUCTURES; NANOWIRES; NONMETALS; OXYGEN; PASSIVATION; PHOTOACOUSTIC EFFECT; SEMICONDUCTING ZINC COMPOUNDS; SURFACE PHENOMENA; SURFACES; TRANSISTORS; ZINC ALLOYS; ZINC OXIDE;

(PL) PROPERTIES; AMBIENT AIR (AA); AMERICAN INSTITUTE OF PHYSICS (AIP); ELECTRONIC CHARACTERISTICS; FIELD EFFECT TRANSISTOR (FET); GATE BIASES; NANO WIRES; NANOWIRE SURFACES; POSITIVE GATE BIAS; SURFACE DEPLETION; SWEEP RATES; ZNO NANOWIRE;

FIELD EFFECT TRANSISTORS;

EID: 45149097709     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945637     Document Type: Article

References (20)

1. W. I. Park, G.-C. Yi, M. Kim, and S. J. Pennycook, Adv. Mater. (Weinheim, Ger.) 15, 526 (2003).
2. Z. R. Dai, Z. W. Pan, and Z. L. Wang, Adv. Funct. Mater. 13, 9 (2003).
3. S.-W. Kim, H.-K. Park, M.-S. Yi, N.-M. Park, J.-H. Park, S.-H. Kim, S.-L. Maeng, C.-J. Choi, and S.-E. Moon, Appl. Phys. Lett. 90, 033107 (2007).
4. Z. L. Wang and J. Song, Science 312, 242 (2006).
5. Z. Fan and J. G. Lu, Appl. Phys. Lett. 86, 123510 (2005).
6. J. Goldberger, D. J. Sirbuly, M. Law, and P. Yang, J. Phys. Chem. B 109, 9 (2005).
7. Q. H. Li, Y. X. Liang, Q. Wan, and T. H. Wang, Appl. Phys. Lett. 85, 6389 (2004).
8. Z. Fan, D. Wang, P.-C. Chang, W.-Y. Tseng, and J. G. Lu, Appl. Phys. Lett. 85, 5923 (2004).
9. Y. Zhang, A. Kolmakov, S. Chretien, H. Metiu, and M. Moskovits, Nano Lett. 4, 403 (2004).
10. F. Chaabouni, M. Abaab, and B. Rezig, Sens. Actuators B 100, 200 (2004).
11. S. Song, W.-K. Hong, S.-S. Kwon, and T. Lee, Appl. Phys. Lett. (unpublished).
12. P.-C. Chang, Z. Fan, C.-J. Chien, D. Stichtenoth, C. Ronning, and J. G. Lu, Appl. Phys. Lett. 89, 133113 (2006).
13. W. I. Park, J. S. Kim, G.-C. Yi, M. H. Bae, and H.-J. Lee, Appl. Phys. Lett. 85, 5052 (2004).
14. S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, J. Vac. Sci. Technol. B 25, 1432 (2007).
15. S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, Appl. Phys. Lett. 90, 162112 (2007).
16. W.-K. Hong, J. I. Sohn, D.-K. Hwang, S.-S. Kwon, G. Jo, S. Song, S.-M. Kim, H.-J. Ko, S.-J. Park, M. E. Welland, and T. Lee, Nano Lett. 8, 950 (2008).
17. D. Wang, Y.-L. Chang, Q. Wang, J. Gao, D. B. Farmer, R. G. Gordon, and H. Dai, J. Am. Chem. Soc. 126, 11602 (2004).
18. E. Cimpoiasu, E. Stern, R. Klie, R. A. Munden, G. Cheng, and M. A. Reed, Nanotechnology 17, 5735 (2006).
19. M. Takata, D. Tsubone, and H. Yanagida, J. Am. Ceram. Soc. 59, 4 (1976).
20. A. Z. Sadek, S. Choopun, W. Wlodarski, S. J. Ippolito, and K. Kalantar-Zadeh, IEEE Sens. J. 7, 919 (2007).