Silicon fusion bonding and deep reactive ion etching: A new technology for microstructures

Sensors and Actuators, A: Physical

Volumn 52, Issue 1-3, 1996, Pages 132-139

  Klaassen, Erno H ^a   Petersen, Kurt ^b,d   Noworolski, J Mark ^c   Logan, John ^b   Maluf, Nadim I ^b   Brown, Joe ^b   Storment, Christopher ^a   McCulley, Wendell ^b   Kovacs, Gregory T A ^a  

^a Stanford University   (United States)

^b Lucas NovaSensor   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d NONE   (United States)

Author keywords

Bulk micromachining; Deep reactive ion etching; High aspect ratio microstructures; Microelectromechanical systems; Silicon fusion bonding; Single crystal silicon

Indexed keywords

ASPECT RATIO; BONDING; MICROMACHINING; MICROSTRUCTURE; REACTIVE ION ETCHING; SILICON; SINGLE CRYSTALS;

DEEP REACTIVE ION ETCHING; HIGH ASPECT RATIO MICROSTRUCTURES; SILICON FUSION BONDING;

MICROELECTROMECHANICAL DEVICES;

EID: 0030100650     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(96)80138-5     Document Type: Article

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