Residual lattice strain in thin silicon-on-insulator bonded wafers: Thermal behavior and formation mechanisms

Journal of Applied Physics

Volumn 87, Issue 2, 2000, Pages 675-681

  Iida, Tsutomu ^a   Itoh, Takamasa ^a   Noguchi, Daisuke ^a   Takano, Yukio ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000150332     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371925     Document Type: Article

References (15)

1. T. Mizuno, R. Ohba, and K. Ohuchi, Appl. Phys. Lett. 69, 106 (1996).
2. T. Emori et al., IEEE Trans. Electron Devices 45, 1000 (1998).
3. J.-P. Colinge, IEEE Trans. Electron Devices 45, 1010 (1998).
4. J. N. Burgfartz, R. C. McIntosh, and C. L. Stanis, IEEE Trans. Electron Devices 41, 1379 (1994).
5. U. Apel, H. G. Graf, C. Harendt, B. Höfflinger, and T. Ifström, IEEE Trans. Electron Devices 38, 1655 (1991).
6. B. Nagapudi, R. Sunkavalli, and B. J. Baliga, IEEE Trans. Electron Devices 45, 1155 (1998).
7. R. R. Razouk, L. N. Lie, and B. E. Deal, J. Electrochem. Soc. 128, 2214 (1981).
8. E. P. EerNisse and G. F. Derbenwick, IEEE Trans. Nucl. Sci. NS-23, 1534 (1976).
9. A. Fukuhara and Y. Takano, Acta Crystallogr., Sect. A: Cryst. Phys., Difft., Theor. Gen. Crystallogt. A33, 137 (1977).
10. K. Mitani, A. Kanai, K. Ohki, M. Katayama, and T. Abe, Semiconductor Wafer Bonding: Science, Technology and Applications, edited by M. A. Schmidt (Electrochemical Society, Pennington, NJ, 1994), p. 443.
11. T. Abe, M. Nakano, and T. Itoh, Silicon-on-insulator Technology and Application, edited by D. N. Schmidt (Electrochemical Society, Pennington, NJ, 1990), p. 61.
12. E. P. EerNisse, Appl. Phys. Lett. 35, 8 (1979).
13. E. Kobeda and E. A. Irene, J. Vac. Sci. Technol. B 4, 720 (1986).
14. S. Isomae, J. Appl. Phys. 52, 2782 (1981).
15. S. Isomae, J. Appl. Phys. 57, 216 (1985).