Direct bonding of oxidized cavity wafers

ECS Transactions

Volumn 16, Issue 8, 2009, Pages 457-463

  Palokangas, M ^a   Dekker, J ^b   Henttinen, K ^b   Makmen J ^a  

^a Okmetic Oyj   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; SILICON WAFERS; THERMOOXIDATION;

DIRECT BONDING; ETCH-STOP LAYERS; MEMS FABRICATION; MEMS-STRUCTURE; OXIDATION PARAMETERS; OXIDATION TEMPERATURE; SOI WAFERS; THERMAL OXIDATION;

WAFER BONDING;

EID: 63149133284     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982900     Document Type: Conference Paper

References (3)

1. T. Suni, K. Henttinen, J. Dekker, H. Luoto, M. Kulawski, J. Mäkinen and R. Mutikainen, J. Electrochem. Soc. 153, G299 (2006).
2. T. Suni, J. Kiihamäki, K. Henttinen, I. Suni and J. Mäkinen, in Semiconductor Wafer Bonding: Science, Technology and Applications VII, C. Hunt, H. Baumgart, S. Begtsson and T. Abe, Editors, PV 2003-19, p. 70, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).
3. P. M. Fahey, S. R. Mader, S. R. Stiffler, R. L. Mohler, J. D. Mis and J. A. Slinkman, IBM J. Res. Develop. 36, 158 (1992).