Detection and quantification of surface nanotopography-induced residual stress fields in wafer-bonded silicon

Journal of the Electrochemical Society

Volumn 155, Issue 1, 2008, Pages

  Horn, Gavin ^a,e   Chu, Yong S ^b   Zhong, Yuncheng ^b   MacKin, Thomas J ^c   Lesniak, Jon R ^d   Reiniger, Daniel ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c CALIFORNIA POLYTECHNIC STATE UNIVERSITY   (United States)

^d Stress Photonics Inc   (United States)

^e ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE PROCESSING; SILICON-ON-INSULATOR SUBSTRATES; SURFACE NANOTOPOGRAPHY; X-RAY TOPOGRAPHY (XRT);

NANOTECHNOLOGY; POLARISCOPES; RESIDUAL STRESSES; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

WAFER BONDING;

EID: 36448987202     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2799880     Document Type: Article

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