Trapped particle detection in bonded semiconductors using gray-field photoelastic imaging

Experimental Mechanics

Volumn 45, Issue 5, 2005, Pages 457-466

  Horn, G ^a   Mackin, T J ^b   Lesniak, J ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b CALIFORNIA POLYTECHNIC STATE UNIVERSITY   (United States)

^c Stress Photonics Inc   (United States)

Author keywords

Bonded semiconductors; Defect detection; Grey field photoelasticity; Nondestructive evaluation; Photoelastic stress analysis; Silicon

Indexed keywords

DEFECTS; INFRARED IMAGING; INFRARED TRANSMISSION; POLARISCOPES; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SILICON WAFERS;

BONDED SEMICONDUCTORS; DEFECT DETECTION; GREY FIELD PHOTOELASTICITY; PHOTOELASTIC STRESS ANALYSIS;

PHOTOELASTICITY;

PHOTOELASTICITY;

EID: 26444438215     PISSN: 00144851     EISSN: None     Source Type: Journal    
DOI: 10.1177/0014485105057762     Document Type: Article

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