Si:WO3 heterostructure for Z-scheme water splitting: An ab initio study

Journal of Materials Chemistry A

Volumn 1, Issue 4, 2013, Pages 1078-1085

  Wang, Weichao ^a   Chen, Shiyou ^a,b   Yang, Ping Xiong ^a   Duan, Chun Gang ^a   Wang, Lin Wang ^b  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AB INITIO STUDY; AMORPHOUS LAYER; BONDED INTERFACE; HETEROSTRUCTURE INTERFACES; INTERFACIAL ATOMS; SCHOTTKY BARRIERS; SI(001) SURFACES;

ALIGNMENT; AMORPHOUS SILICON; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACE STATES; LATTICE MISMATCH; SCHOTTKY BARRIER DIODES;

SILICON;

EID: 84876243390     PISSN: 20507488     EISSN: 20507496     Source Type: Journal    
DOI: 10.1039/c2ta00441k     Document Type: Article

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