Ultralow sub-500nA operating current high-performance TiN\Al 2O 3\HfO 2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 159-160

  Goux, L ^a   Fantini, A ^a   Kar, G ^a   Chen, Y Y ^a,b   Jossart, N ^a   Degraeve, R ^a   Clima, S ^a   Govoreanu, B ^a   Lorenzo, G ^a   Pourtois, G ^a   Wouters, D J ^a,b   Kittl, J A ^a   Altimime, L ^a   Jurczak, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

FORMING PROCESS; OPERATING CURRENTS; SET VOLTAGE; TIN ANODES;

HAFNIUM; HAFNIUM OXIDES; INTERFACES (MATERIALS);

TITANIUM NITRIDE;

EID: 84866544568     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242510     Document Type: Conference Paper

References (6)

1. B. Govoreanu et al., IEDM (2011);
2. C.H. Wang et al., IEDM (2010);
3. J. Lee et al., IEDM (2010);
4. L. Pantisano et al., Microel. Eng. 88 (2011);
5. V.V. Afanas'ev et al., Appl. Phys. Lett. 99 (2011);
6. R. Degraeve et al., IEDM (2010)