Molecular beam epitaxy of IV-VI semiconductors: Multilayers, quantum dots and device applications

Molecular Beam Epitaxy

Volumn , Issue , 2013, Pages 263-310

  Springholz, Gunther ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84884001342     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-0-12-387839-7.00013-0     Document Type: Chapter

References (287)

1. Holloway H. Physics of thin films 1980, vol. 11:116. Academic Press, New York. G. Hass, M.H. Frankombe (Eds.).
2. Partin D.L., Heremans J. Handbook on semiconductors 1994, vol. 3A:369. North-Holland, Amsterdam, and Partin DL. In: Williams RK, Beer AC, editors. Semiconductor and semimetals vol. 33. Academic Press, New York, 1991. p. 311. T.S. Moss, S. Mahajan (Eds.).
3. Springholz G., Bauer G. Wiley encyclopdia of electrical and electronic engineering 1999, John Wiley & Sons, New York. J.G. Webster (Ed.).
4. Springholz G. Lead chalcogenides: physics and applications 2002, 123-207. Taylor and Francis, New York. D. Khokhlov (Ed.).
5. Partin D.L. IEEE J Quant Electron QE 1988, 24:1716.
6. Katzir A., Rosman R., Shani Y., Bachem K.H., Böttner H., Preier H.M. Handbook of solid state lasers 1989, 228. Marcel Dekker Inc, New York. P.K. Cheo (Ed.).
7. Bauer G., Kriechbaum M., Shi Z., Tacke M. J Nonlin Opt Phys Mat 1995, 4:283.
8. Tacke M. Long wavelength infrared emitters based on quantum wells and superlattices 2000, 347-396. Gordon & Breach Science Publishers, SA, Amsterdam. M. Helm (Ed.).
9. Ishida A., Fujiyasu H. Lead chalcogenides: physics and applications 2002, 533-553. Taylor and Francis. D. Khokhlov (Ed.).
10. Springholz G., Schwarzl T., Heiss W. Mid-infrared semiconductor optoelectronics 2006, 265-302. Springer-Verlag, London. A. Krier (Ed.).
11. McCann P. Mid-infrared semiconductor optoelectronics 2006, 265-302. Springer-Verlag, London. A. Krier (Ed.).
12. Feit Z., McDonald M., Woods R.J., Archambault V., Mak P. Appl Phys Lett 1996, 68:738.
13. Schießl U., Rohr J. J Infrared Phys Technol 1999, 40:325.
14. Schwarzl T., Heiß W., Springholz G., Aigle M., Pascher H. Electron Lett 2000, 36:322.
15. Springholz G., Schwarzl T., Aigle M., Pascher H., Heiß W. Appl Phys Lett 2000, 76:1807.
16. Shi Z., Xu G., McCann P.J., Fang X.M., Dai N., Felix C.L., et al. Appl Phys Lett 2000, 76:3688.
17. Heiss W., Schwarzl T., Springholz G., Biermann K., Reimann K. Appl Phys Lett 2001, 78:862.
18. Fürst J., Schwarzl T., Böberl M., Pascher H., Springholz G., Heiß W. Appl Phys Lett 2004, 84:3268.
19. Schwarzl T., Eibelhuber M., Heiss W., Kaufmann E., Springholz G., Winter A., et al. J Appl Phys 2007, 101:093102.
20. Rahim M., Arnold M., Felder F., Behfar K., Zogg H. Appl Phys Lett 2007, 91:151102.
21. Rahim M., Fill M., Felder F., Chappuis D., Corda M., Zogg H. Appl Phys Lett 2009, 95:241107.
22. Rahim M., Khiar A., Felder F., Fill M., Zogg H. Appl Phys Lett 2009, 94:201112.
23. Khiar A., Rahim M., Fill M., Felder F., Hobrecker F., Zogg H. Appl Phys Lett 2010, 97:151104.
24. Eibelhuber M., Schwarzl T., Springholz G., Heiss W. Appl Phys Lett 2009, 94:021118.
25. Eibelhuber M., Schwarzl T., Pichler S., Heiss W., Springholz G. Appl Phys Lett 2010, 97:061103.
26. Preier H. Semicond Sci Technol 1990, 5:S12. and Appl Phys 1979;20:189.
27. Findlay P.C., Pidgeon C.R., Kotitschke R., Hollingworth A., Murdin B.N., Langerak C.J.G.M., et al. Phys Rev B 1998, 58:12908.
28. Monitoring of gaseous pollutants by tuneable diode lasers 1992, Kluwer Academic Publ., Dordrecht. R. Grisar, H. Böttner, M. Tacke, G. Restelli (Eds.).
29. Zogg H., Fach A., John J., Masek J., Müller P., Paglino C., et al. Opt Eng 1995, 34:1946.
30. Zogg H. Lead chalcogenides: physics and applications 2002, 587-616. Taylor and Francis. D. Khokhlov (Ed.).
31. Hicks L.D., Harman T.C., Sun X., Dresselhaus M.S. Phys Rev B 1996, 53:R10493.
32. Harman T.C., Spear D.L., Manfra M.J. J Electron Mater 1996, 25:1121.
33. Springholz G., Ihninger G., Bauer G., Olver M.M., Pastalan J.Z., Romaine S., et al. Appl Phys Lett 1993, 63:302.
34. Yuan S., Springholz G., Bauer G., Kriechbaum M. Phys Rev B 1994, 49:5476.
35. Yuan S., Frank N., Bauer G., Kriechbaum M. Phys Rev B 1994, 50:5286.
36. Springholz G., Bauer G. Appl Phys Lett 1993, 62:2399.
37. Koppensteiner E., Springholz G., Hamberger P., Bauer G. J Appl Phys 1993, 74:6062.
38. Schülli T.U., Lechner R.T., Stangl J., Springholz G., Bauer G., Sztucki M., et al. Phys Rev B 2004, 69:195307.
39. Lechner R.T., Springholz G., Schülli T.U., Stangl J., Schwarzl T., Bauer G. Phys Rev Lett 2005, 94:157201.
40. Pinczolits M., Springholz G., Bauer G. Appl Phys Lett 1998, 73:250. and M. Pinczolits, G. Springholz and G. Bauer, J. Cryst. Growth, 1999;201/202:1126.
41. Springholz G., HolyPinczolits M., Bauer G. Science 1998, 282:734.
42. Heiss W., Groiss H., Kaufmann E., Hesser G., Böberl M., Springholz G., et al. Appl Phys Lett 2006, 88:192109.
43. Heiss W., Groiss H., Kaufmann E., Hesser G., Böberl M., Springholz G., et al. J Appl Phys 2007, 101:081723.
44. Ravich Y.I., Efimova B.A., Smirnov I.A. Semiconducting lead chalcogenides 1970, Plenum Press, New York.
45. Lead chalcogenides: physics and applications 2002, Taylor and Francis, New York. D. Khokhlov (Ed.).
46. Jantsch W. Springer Tracts Mod Phys 1983, 99:1.
47. Nanney C.A., Schmidt P.H., Wernick J.H., Garno J.P. J Physique 1968, 29:C 4.
48. Logothetis E.M., Holloway H. Physics of IV-VI compounds and alloys 1974, 153-165. Gordon and Breach, New York. S. Rabii (Ed.).
49. Springholz G., Bauer G., Ihninger G. J Cryst Growth 1993, 127:302.
50. Ueta A.Y., Springholz G., Bauer G. J Cryst Growth 1997, 175/176:1022.
51. Heiss W., Schwarzl T., Roither J., Springholz G., Aigle M., Pascher H., et al. Progr Quantum Electron 2001, 25:193.
52. Dalven R. Solid state physics 1973, vol. 28:179. Academic Press, New York. F. Seitz, D. Thurnbull, H. Ehrenreich (Eds.).
53. Nimtz G. IV-VI compounds. Numerical data and functional relationships in science and technology 1993, vol. 17. Springer Verlag, Berlin, p. 152-80. New Series, Group III, Part F. K. Hellwege, O. Madelung, Landolt-Börnstein (Eds.).
54. Kriechbaum M., Kochevar P., Pascher H., Bauer G. IEEE J Quantum Electron 1989, 24:1727.
55. Pascher H., Bauer G. Lead chalcogenides: physics and applications 2002, 211. Taylor and Francis. D. Khokhlov (Ed.).
56. Schlicht B. IV-VI compounds: solid solutions. Numerical data and functional relationships in science and technology 1993, vol. 17. Springer Verlag, Berlin, 181-90. New Series, Group III, Part F. K. Hellwege, O. Madelung, Landolt-Börnstein (Eds.).
57. Partin D.L. J Electron Mat 1993, 12:917. and J Vac Sci Technol B 1983;1:174.
58. Krenn H., Herbst W., Pascher H., Ueta Y., Springholz G., Bauer G. Phys Rev B 1999, 60:8117.
59. Partin D.L., Electron J. Mat 1984, 13:493.
60. Ishida A., Matsuura S., Mizuno M., Sase Y., Fujiyasu H. J Appl Phys 1988, 63:4572. and Ishida A, Nakahara N, Okamura T, Sase Y, Fujiyasu H. Appl Phys Lett 1988;53:274.
61. Norton P., Knoll G., Bachem K.H. J Vac Sci Technol 1985, 3:782.
62. Norton P., Tacke M. Proc SPIE 1985, 659:195. and J. Cryst. Growth 1987;81:405.
63. Ishida A., Sase Y., Okamura T., Nakahara N., Fujiyasu H. Superlatt Microstruct 1989, 6:27.
64. Holloway H., Jesion G. Phys Rev B 1982, 26:5617.
65. Partin D.L., Clemens B.M., Swets D.E., Thrush C.M., Vac J. Sci Technol B 1986, 4:578.
66. Partin D.L., Thrush C.M., Clemens B.M. J Vac Sci Technol 1987, B5:686.
67. Lambrecht A., Nerres N., Spranger B., Kuhn S., Böttner H., Tacke M. J Cryst Growth 1991, 108:301.
68. Ishida A., Muramatsu K., Ishino K., Fujiyasu H. Semicon Sci Technol 1990, 5:S334.
69. Ishida A., Tsuchiya T., Yoshioka N., Fujiyasu H. Jpn J Appl Phys 1999, 38:4652.
70. Partin D.L. Mat Res Soc Symp Proc 1987, 90:47.
71. Sakurai N., Fujiyasu H., Ishida A. Jpn J Appl Phys 1994, 33:151.
72. Spranger B., Schiessel U., Lamprecht A., Böttner H., Tacke M. Appl Phys Lett 1988, 53:154.
73. Ishida A., Sakurai N., Aikawa K., Fujiyasu H. Solid State Electron 1994, 37:1141.
74. Shi Z., Tacke M., Lambrecht A., Böttner H. Appl Phys Lett 1995, 66:2537.
75. Korczak Z., Subotowicz M. Phys Stat Sol A 1983, 77:497.
76. Escorne M., Mauger A., Tholence J.L., Triboulet R. Phys Rev B 1984, 29:6306.
77. Bauer G., Pascher H., Zwawadski V. Semicond Sci Technol 1992, 7:703.
78. Koguchi N., Takahashi S., Kiyosawa T. Jpn J Appl Phys 1988, 27:2376.
79. Geist F., Pascher H., Kriechbaum M., Frank N., Bauer G. Phys Rev B 1996, 54:4820. Geist F, Pascher H, Frank N, Bauer G. Phys Rev B 1996;53:3820.
80. Rogers C., Crocker A.J. J Phys D 1971, 4:1006.
81. Sealy B.J., Crocker A.J. J Electron Mat 1973, 8:1248.
82. Calawa A.R., Mroczkowski J.A., Harman T.C. J Electron Mat 1971, 1:191.
83. Sood A.K., Zemel J.N. J Appl Phys 1978, 69:5292.
84. Koguchi N., Kiyosawa T., Takahash S. J Cryst Growth 1987, 81:400.
85. Ueta A.Y., Springholz G., Schinagl F., Bauer G. Thin Solid Films 1997, 306:320.
86. Prinz A., Brunthaler G., Ueta Y., Springholz G., Bauer G., Grabecki G., et al. Phys Rev B 1999, 59:1283.
87. Grabecki G., Wrobel J., Dietl T., Byczuk K., Papis E., Kaminska E., et al. Phys Rev B 1999, 60:R5133.
88. Grabecki G., Wrobel J., Dietl T., Janik E., Aleszkiewicz M., Papis E., et al. Rev B 2005, 72:125332.
89. Colin R., Drowart J. J Chem Phys 1962, 37:1120.
90. Northrop D.A. J Phys Chem 1971, 75:118.
91. Novoselova A.V., Lomanow V.P. Current topics in material science 1981, vol. 7:643. North-Holland Publishing Co. E. Kaldis (Ed.).
92. Pratt G.W. J Nonmetals 1973, 1:103.
93. Parada N.J. Phys Rev B 1972, 3:2042. Parada NJ, Pratt Jr GW. Phys Rev Lett 1969;22:180.
94. Heinrich H. Narrow gap semiconductors: physics and applications 1980, 407. Springer Verlag, Berlin. W. Zawadski (Ed.).
95. Fuchs J., Feit Z., Preier H. Appl Phys Lett 1988, 53:894.
96. Springholz G., Bauer G. J Appl Phys 1995, 77:1.
97. Springholz G., Bauer G. Appl Phys Lett 1992, 60:1600.
98. Springholz G., Bauer G. J Cryst Growth 1994, 144:157.
99. Smith D.L., Pickhardt V.Y. J Electron Mat 1976, 3:247. Smith DL, Pickhardt VY. J Electrochem Soc 1978;125:2042.
100. Springholz G., Bauer G. Phys Rev B 1993, 48:10998.
101. Frank N., Springholz G., Bauer G. Phys Rev Lett 1994, 73:2236.
102. Clemens H., Krenn H., Tranta B., Ofner P., Bauer G. Superlatt Microstr 1988, 4:591.
103. Clemens H., Ofner P., Bauer G., Hong J.M., Chang L.L. Mater Lett 1988, 7:127.
104. Müller P., Fach A., John J., Tiwari A., Zogg H., Kostorz G., et al. Phys 1996, 79:1911.
105. Bis R.F., Farabaugh E.N., Muth E.P. J Appl Phys 1976, 47:736.
106. Cook J., Das S., Lockwood D., McCaffrey J., Timbrell P. Appl Phys Lett 1990, 56:2430.
107. Zogg H., Vogt W., Melchior H. Infrared Phys 1985, 25:333.
108. Lopez-Otero A. Thin Solid Films 1978, 49:3. J Appl Phys 1977;48:446.
109. Holloway H., Hohnke D.K., Crawley R.L., Wilkes E. J Vac Sci Technol 1970, 7:586. Holloway H, Logothetis EM, Wilkes E, J Appl Phys 1970;41:3543.
110. Clemens H., Fantner E.J., Ruhs W., Bauer G. J Cryst Growth 1984, 66:251.
111. Snyman J.C., Gouws G., Muller R.J. J Cryst Growth 1984, 70:373.
112. Pongratz P., Sitter H. J Cryst Growth 1987, 80:73.
113. Stoemenos J., Zheleva N.N., Koparanowa M.H. J Cryst Growth 1989, 97:443.
114. Egerton R.F. Surf Sci 1971, 24:647. and Surf Sci 1972;33:209.
115. Springholz G. Molecular beam epitaxy and in situ reflection high-energy electron diffraction of IV-VI semiconductor heterostructures 1994, Universitätsverlag RudolfTrauner, Linz.
116. Springholz G., Ueta A.Y., Frank N., Bauer G. Appl Phys Lett 1996, 69:2824.
117. Hohnke D.K., Holloway H., Harley M.D. Thin Solid Films 1976, 38:49.
118. Zogg H., Blunier S., Fach A., Maissen C., Müller P., Teodoropol S., et al. Phys Rev B 1994, 50:10801.
119. Fach A., John J., Müller P., Paglino C., Zogg H. J Electron Mat 1997, 26.
120. Tranta B., Clemens H. Lecture notes in physics 1988, vol. 301. Springer Verlag, Berlin, p. 281.
121. Mengui U.A., Abramof E., Rappl P.H.O., Díaz B., Closs H., Senna J.R., et al. J Appl Phys 2009, 105:043709.
122. Zlomanov V., Yashina L. Lead chalcogenides: physics and applications 2002, 37-121. Taylor and Francis, New York. D. Khokhlov (Ed.).
123. Springholz G., Wiesauer K. Phys Rev Lett 2002, 88:015507.
124. Wiesauer K., Springholz G. Appl Surf Sci 2002, 188:49.
125. Wiesauer K., Springholz G. Appl Phys Lett 2003, 83:5160.
126. Wiesauer K., Springholz G. Phys Rev B 2004, 69:245313.
127. Springholz G., Bauer G., Holy V. Phys Rev B 1996, 54:4500.
128. Springholz G., Bauer G., Holy V. Surf Sci 1996, 365:453.
129. Springholz G. Appl Surf Sci 1997, 112:12.
130. Springholz G., Frank N., Bauer G. Thin Solid Films 1995, 267:15.
131. Wintersberger E., Hrauda N., Kriegner D., Keplinger M., Springholz G., Stangl J., et al. Appl Phys Lett 2010, 96:131905.
132. Zemel J.N. Solid State Surf Sci 1969, 1:291. Zemel JN, Jenser BD, Schoolar RB. Phys Rev 1965;140:A330.
133. Ishida A., Fujiyasu H., Ebe H., Shinohara K. J Appl Phys 1986, 59:3023. Superlatt Microstr 1986;2:575.
134. Abramoff E., Ferreira S.O., Boschetti C., Bandeira I.N. J Cryst Growth 1989, 96:637.
135. Zogg H., Hüppi M. Appl Phys Lett 1985, 47:133.
136. Zogg H., Blunier S., Fach A., Maissen C., Masek J. Opt Eng 1994, 33:1440.
137. Blunier S., Zogg H., Maissen C., Tiwari A.N., Overney R.M., Haefke H., et al. Phys Rev Lett 1992, 68:3599.
138. Fedorenko A.I., Fedorov A., Sipatov A.Y., Mironov O.A. Thin Solid Films 1995, 267:134.
139. Yoshino J., Munetaka H., Chang L.L., Vac J. Sci Technol B 1987, 5:683.
140. Koike K., Honden T., Makabe I., Ping Yan F., Yano M. J Cryst Growth 2003, 257:212. Mitsuaki Yano, Isao Makabe, Kazuto Koike, Physica E 2004;20:449.
141. Yano M., Koike K., Furushou T., Yodo T. J Crystal Growth 1997, 175/176:665.
142. Karczewski G., Jaroszyński J., Barcz A., Kutrowski M., Wojtowicz T., Kossut J., et al. Growth 1998, 184/185:814.
143. Koike K., Tanaka T., Li S., Yano M. J Cryst Growth 2001, 227-228:671.
144. Bauer G., Clemens H. Semicond Sci Technol 1990, 5:S122.
145. Pinczolits M., Springholz G., Bauer G. Phys Rev B 1999, 60:11524.
146. Hiro Z., Nakayama N., Bando Y. J Appl Phys 1987, 61:206.
147. Tamor M.A., Holloway H., Davis L.C. Superlatt Microstr 1988, 4:493.
148. Ferreira S.O., Abramof E., Rappl P.H.O., Ueta A.Y., Closs H., Boschetti C., et al. J Appl Phys 1998, 84:3650.
149. Ishida Akihiro, Yamada Tomohiro, Tsuchiya Takuro, Inoue Yoku, Takaoka Sadao, Kita Takuji Appl Phys Lett 2009, 95:122106.
150. Ueta A.Y., Abramof E., Boschetti C., Closs H., Motisuke P., Rappl P.H.O., et al. Microelectron J 2002, 33:331.
151. Kinoshita H., Fujiyasu H. J Appl Phys 1980, 51:5845.
152. Pichler P., Fantner E.J., Bauer G., Clemens H., Pascher H., von Ortenberg M., et al. Superlatt Microstr 1985, 1:1.
153. Fantner E.J. Appl Phys Lett 1985, 47:803.
154. Beyer H., Nurnus J., Böttner H., Lambrecht A., Roch T., Bauer G. Appl Phys Lett 2002, 80:1216.
155. Partin D.L., Vac J. Sci Technol 1982, 21:1.
156. Clemens H., Ofner P., Krenn H., Bauer G. J Cryst Growth 1987, 84:571.
157. Jeffers J.D., Namjou K., Cai Z., McCann P.J., Olona L. Appl Phys Lett 2011, 99:041903.
158. Springholz G., Pinczolits M., Mayer P., Holy V., Bauer G., Kang H.H., et al. Phys Rev Lett 2000, 84:4669.
159. Kepa H., Springholz G., Giebultowicz T.M., Majkrzak C.F., Kacman P., Blinowski J., et al. Phys Rev B 2003, 68:024419.
160. Heremans J.P., Partin D.L. Phys Rev B 1988, 37:6311.
161. Stachow-Wojcik A., Story T., Dobrowolski W., Arciszewska M., Gazka R.R., Kreijveld M.W., et al. Phys Rev B 1999, 60:15220.
162. Springholz G., Kriechbaum M., Hoffman W., Geist F., Pascher H., Yuan S., et al. Superlatt Microstr 1993, 13:25.
163. Abramof E., Rappl P.H.O., Ueta A.Y., Motisuke P. J Appl Phys 2000, 88:725.
164. Abramof E., de Andrada e Silva E.A., Ferreira S.O., Motisuke P., Rappl P.H.O., Ueta A.Y. Phys Rev B 2001, 63:085304.
165. Salamanca-Young L., Partin D.L., Heremans J. Mat Res Soc Symp Proc 1987, 103:133.
166. Goltsos W.C., Nurmikko A.V., Partin D.L. Solid State Comm 1986, 59:183. Goltsos WC, Nakahara J, Nurmikko A, Partin DL. Surf Sci 1986;174:288.
167. Springholz G., Holzinger A., Krenn H., Clemens H., Bauer G., Böttner H., et al. J Cryst Growth 1991, 113:593.
168. Böberl M., Heiss W., Schwarzl T., Wiesauer K., Springholz G. Appl Phys Lett 2003, 82:4065.
169. Shi Z., Lambrecht A., Tacke M. Solid State Electron 1994, 37:1113.
170. Simma M., Fromherz T., Bauer G., Springholz G. Appl Phys Lett 2009, 95:212103.
171. Beyer H., Larnbrecht A., Numus J., Bothet H., Griessmann H., Heinrich A., et al. Proc 18 ICT '99 1999, 687.
172. Wu H.Z., Dai N., Johnson M.B., McCann P.J., Shi Z.S. Appl Phys Lett 2001, 78:2199.
173. Wu Huizhen, Dai Ning, McCann Patrick J. Phys Rev B 2002, 66:045303.
174. Shen W.Z., Wang K., Jiang L.F., Wang X.G., Shen S.C., Wu H.Z., et al. Appl Phys Lett 2001, 79:2579. J Appl Phys 2002;91:6507.
175. McCann P.J., Namjou K., Fang X.M. Appl Phys Lett 1999, 75:3608.
176. McCann P.J., Kamat P., Li Y., Sow A., Wu H.Z., Belenky G., et al. J Appl Phys 2005, 97:053103.
177. McAlister D.W., McCann P.J., Namjou K., Fang X.M., Alkhouli O., Wu H.Z. J Appl Phys 2001, 89:3514.
178. Takahashi S., Koguchi N., Chikyow T., Kiyosawa T., Fujiwara J. Electron Lett 1990, 26:1715.
179. Clemens H., Krenn H., Weilguni P., Stromberger U., Bauer G., Pascher H. Surf Sci 1990, 228:236. J Vac Sci Technol A 1989;7:3197.
180. Frank N., Voiticek A., Clemens H., Holzinger A., Bauer G. J Cryst Growth 1993, 126:293.
181. Hashimoto S., Koguchi N., Takahashi S., Akiba S. J Cryst Growth 1989, 95:599.
182. Koike K., Harada H., Itakura T., Yano M., Heiss W., Groiss H., et al. J Cryst Growth 2007, 301-302:722.
183. Groiss H., Kaufmann E., Springholz G., Schwarzl T., Hesser G., Schäffler F., et al. Appl Phys Lett 2007, 91:222106.
184. Groiss H., Kaufmann E., Springholz G., Schwarzl T., Hesser G., Schäffler F., et al. J Phys Cond Matt 2008, 20:454216.
185. Koike K., Itakura T., Hotei T., Yano M. Appl Phys Lett 2007, 91:181911.
186. Koike K., Hotei Takanori, Kawaguchi Ryou, Yano Mitsuaki J Cryst Growth 2009, 311:2102.
187. Hochreiner A., Kriechbaumer S., Schwarzl T., Groiss H., Hassan M., Springholz G. Appl Phys Lett 2012, 100:113112.
188. Krenn H., Koppensteiner E., Holzinger A., Voitichek A., Bauer G., Clemens H. J Appl Phys 1992, 72:97.
189. Schierle E., Weschke E., Gottberg A., Söllinger W., Heiss W., Springholz G., et al. Phys Rev Lett 2008, 101:267202.
190. Bauer G. Surf Sci 1986, 168:462.
191. Pongratz P., Clemens H., Fantner E.J., Bauer G. Inst Phys Conf Ser 1985, 76:313.
192. Shima M., Salamanca-Riba L., Springholz G., Bauer G. Mat Res Soc Proc 1996, 399:543.
193. Ishida A., Fujiyasu H. Jpn J Appl Phys 1985, 24:L956.
194. Shinohara K., Nishijima Y., Ebe H. Appl Phys Lett 1985, 47:1184.
195. Leute V., Schmidtke H. Ber Bunsenges Physk Chem 1975, 79:1134.
196. Ishida A., Aoki M., Fujiyasu H. J Appl Phys 1985, 58:797.
197. Bauer G., Pascher H., Kriechbaum M. Phys Scripta 1987, 36.
198. Goltsos W.C., Nakahara J., Nurmikko A.V., Partin D.L. Appl Phys Lett 1985, 46:1173.
199. Valeiko M.V., Zasavitskii I.I., Matveenko A.V., Matsonashvili B.N., Rukhadze Z.A. Superlatt Microstr 1991, 9:195.
200. Zasavitskii I.I., de Andrada e Silva E.A., Abramof E., McCann P.J. Phys Rev B 2004, 70:115302.
201. Yuan S., Krenn H., Springholz G., Bauer G., Kriechbaun M. Appl Phys Lett 1993, 62:885.
202. Kim L.S., Drew H., Doezman R., Heremans J.P., Partin D.L. Phys Rev B 1989, 35:2521.
203. Yuan S., Krenn H., Springholz G., Bauer G. Phys Rev B 1997, 55:4607.
204. Simma M., Fromherz T., Raab A., Springholz G., Bauer G. Appl Phys Lett 2006, 88:201105.
205. Geist F., Pascher H., Frank N., Bauer G., Kriechbaum M. Semicond Sci Technol 1993, 8:S147.
206. Kriechbaum M., Ambrosch K., Fantner E., Clemens H., Bauer G. Phys Rev B 1984, 30:3394.
207. Heremans J.P., Partin D.L., Dresselhaus P., Shayegan M., Drew H. Appl Phys Lett 1986, 48:928.
208. Takaoka S., Nihei F., Murase K., Ishida A., Fujiyasu H. J Phys Soc Jpn 1986, 55:2519.
209. Oswald J., Heigl G., Pippan M., Span G., Stellberger T., Mande D.K., et al. Surf Sci 1996, 361/263:525.
210. Chitta V.A., Desrat W., Maude D.K., Piot B.A., Oliveira N.F., Rappl P.H.O., et al. Phys Rev B 2005, 72:195326.
211. Grabecki G., Kolwas K.A., Wróbel J., Kapcia K., Puźniak R., Jakieła R., et al. J Appl Phys 2010, 108:053714.
212. Olver M.M., Pastalan J.Z., Romaine S.E., Goldberg B.B., Springholz G., Ihninger G., et al. Solid State Comm 1994, 89:693.
213. Grabecki G., Wrobel J., Dietl T., Sawicki M., Domagala J., Skoskiewicz T., et al. Superlatt Microstr 1997, 22:51.
214. Butler J.F., Calawa A.R., Phelan R.J., Harman T.C., Strauss A.J., Rediker R.H. Appl Phys Lett 1964, 5:75.
215. Fürst J., Pascher H., Schwarzl T., Böberl M., Heiss W., Springholz G., et al. Appl Phys Lett 2002, 81:208.
216. Feit Z., Kostyk D., Woods R., Mak P. Appl Phys Lett 1990, 57:2891. 1991;58:343.
217. Sani Y., Katzir A., Bachem K.H., Norton P., Tacke M., Preier H.M. Appl Phys Lett 1986, 48:1178.
218. Partin D.L., Heremans J.P., Thrush C.M. Supperlatt Microstr 1986, 2:459.
219. Rosman R., Katzir A., Norton P., Tacke M., Preier H.M. IEEE J Quantum Electron 1987, 23:94.
220. Schlereth K.H., Böttner H., Tacke M. Appl Phys Lett 1990, 56:2169.
221. Nishijima Y., Shinohara K. Appl Opt 1993, 32:4485.
222. Feit Z., Kostyk D., Woods R. Monitoring of gaseous pollutants by tunable diode lasers 1990, 105. Kluwer Academic, Dordrecht. R. Grisar, H. Böttner, M. Tacke (Eds.).
223. Shotov A.P. Monitoring of gaseous pollutants by tunable diode lasers 1990, 125-137. Kluwer Academic Publ., Dordrecht. R. Grisar, H. Böttner, M. Tacke (Eds.).
224. Ishida A., Muramatsu K., Takashiba H., Fujiyasu H. Appl Phys Lett 1989, 55:430.
225. Preier H., Bleicher M., Riedel W., Pfeiffer H., Maier H. Appl Phys 1977, 12:277.
226. Abe S., Furukawa Y., Mochzuki K., Masumoto K. J Jpn Inst Metals 1994, 58:346.
227. Kowalczyk L. Monitoring of gaseous pollutants by tuneable diode lasers 1990, 145. Kluwer Academic Publ., Dordrecht. R. Grisar, H. Böttner, M. Tacke, G. Restelli (Eds.).
228. Fürst J., Schwarzl T., Böberl M., Pascher H., Springholz G., Heiß W., et al. Appl Phys Lett 2005, 86:021109.
229. Rosman R., Katzir A. IEEE J Quantum Electron 1982, 18:814.
230. Zogg H., Maier P., Melchior H. J Cryst Growth 1987, 80:408.
231. Zogg H., Vogt W., Melchior H. Nucl Instr Methods A 1987, 253:418.
232. Zogg H., Blunier S., Hoshino T., Maissen C., Masek J., Tiwari A.N. IEEE Trans Electron Devices 1991, 38:1110.
233. Zogg H., Maissen C., Masek J., Hoshino T., Blunier S., Tiwari A.N. Semicond Sci Technol 1991, 6:C36.
234. Mathet V., Galtier P., Nguyen-Van-Dau F., Padeletti G., Olivier J. J Cryst Growth 1993, 132:241. Collot P, Nguyen-van-Dau F, Mathet V. Semicond Sci Technol 1994;9:1.
235. Fach A., John J., Masek J., Müller P., Paglino C., Zogg H. Semiconductor heteroepitaxy: growth characterization and device applications 1995, 294. World Scientific, Singapore. B. Gil, R. Aulombard (Eds.).
236. Schwarzl T., Heiss W., Springholz G. Appl Phys Lett 1999, 75:1246. Schwarzl T, Springholz G, Seyringer H, Krenn H, Lanzerstorfer S, Heiß W. IEEE J Quantum Electron 1999;35:1753.
237. Baumgartner E.W., Schwarzl T., Springholz G., Heiss W. Appl Phys Lett 2006, 89:051110.
238. Springholz G., Schwarzl T., Heiß W., Seyringer H., Lanzerstorfer S., Krenn H. J Cryst Growth 1999, 201/202:999.
239. Springholz G., Schwarzl T., Heiss W., Aigle M., Pascher H., Vavra I. Appl Phys Lett 2001, 79:1225.
240. Schwarzl T., Springholz G., Böberl M., Kaufmann E., Roither J., Heiss W., et al. Appl Phys Lett 2005, 86:031102.
241. Felix C.L., Bewley W.W., Vurgaftman I., Lindle J.R., Meyer J.R., Wu H.Z., et al. Appl Phys Lett 2001, 78:3770.
242. Arnold M., Zimin D., Zogg H. Appl Phys Lett 2005, 87:141103.
243. Böberl M., Fromherz T., Roither J., Pillwein G., Springholz G., Heiss W. Semicond Sci Techn Lett 2004, 19:L115.
244. Böberl M., Fromherz T., Roither J., Pillwein G., Springholz G., Heiss W. Appl Phys Lett 2006, 88:041105.
245. Felder F., Arnold M., Rahim M., Ebneter C., Zogg H. Appl Phys Lett 2007, 91:101102.
246. Fürst J., Schwarzl T., Böberl M., Pascher H., Springholz G., Heiß W. IEEE J Quantum Electron 2004, 40:966.
247. Zhao F., Wu H., Jayasinghe Lalith, Shi Z. Appl Phys Lett 2002, 80:1129.
248. Fill M., Khiar A., Rahim M., Felder F., Zogg H. J Appl Phys 2011, 109:093101.
249. Ishida A., Sugiyama Y., Isaji Y., Kodama K., Takano Y., Sakata H., et al. Appl Phys Lett 2011, 99:121109.
250. Bimberg D., Grundmann M., Ledentsov N.N. Quantum dot heterostructures 1998, For a review see, e.g., Chichester, Wiley.
251. Shchukin V.A., Ledentsov N.N., Bimberg D. Epitaxy of nanostructures 2004, Springer Verlag, Berlin.
252. Stangl J., Holy V., Bauer G. Rev Mod Phys 2004, 76:725.
253. Tersoff J., LeGoues F.K. Phys Rev Lett 1994, 72:3570.
254. Springholz G. Compt Rendues Phys 2005, 6:89.
255. Springholz G. Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics 2008, 1-60. Butterworth-Heinemann, Elshevier, Oxford. M. Henini (Ed.).
256. Holy V., Springholz G., Pinczolits M., Bauer G. Phys Rev Lett 1999, 83:356.
257. Harman T.C., Taylor P.J., Walsh M.P., LaForge B.E. Science 2002, 297:2229.
258. Raab A., Springholz G. Appl Phys Lett 2002, 81:2457.
259. Raab A., Springholz G., Lechner R.T. Phys Rev B 2003, 67:165321.
260. Raab A., Springholz G. Appl Phys Lett 2000, 77:2991.
261. Alchalabi K., Zimin1 D., Kostorz G., Zogg H. Phys Rev Lett 2003, 90:026104.
262. Abtin L., Springholz G., Holy V. Phys Rev Lett 2006, 97:266103.
263. Springholz G., Abtin L., Holy V. Appl Phys Lett 2007, 90:113119.
264. Abtin L., Springholz G. Appl Phys Lett 2008, 93:163102.
265. Holy V., Stangl J., Springholz G., Pinczolits M., Bauer G. J Phys D 2001, 34:A1.
266. Holy V., Schülli T.U., Lechner R.T., Springholz G., Bauer G. J Alloys Compd 2005, 401:4. Appl Surf Sci 2006;253:177.
267. Springholz G., Holy V. Lateral alignment of epitaxial quantum dots, Springer series on nanoscience and technology 2008, 245-303. Springer Verlag, Berlin. O. Schmidt, P. Avouris, K.V. Klitzing, H. Sakaki, R. Wiesendanger (Eds.).
268. Tersoff J., Teichert C., Lagally M.G. Phys Rev Lett 1996, 76:1675.
269. Raab A., Lechner R.T., Springholz G. Appl Phys Lett 2002, 80:1273.
270. Lechner R.T., Schülli T., Holy V., Springholz G., Stangl J., Raab A., et al. Appl Phys Lett 2004, 84:8858.
271. Springholz G., Raab A., Lechner R.T., Holy V. Appl Phys Lett 2003, 82:799.
272. Springholz G., Pinczolits M., Holy V., Mayer P., Wiesauer K., Roch T., et al. Surf Sci 2000, 454-456:657.
273. Mixa M., Holy V., Springholz G. Phys Rev B 2009, 80:045325.
274. Aigle M., Pascher H., Springholz G., Pinczolits M., Schwarzl T., Heiss W., et al. Phys Stat Solidi 2001, 224:223.
275. Schwarzl T., Heiss W., Springholz G., Krenn H., Fromherz T., Raab A., et al. Phys Rev B 2002, 65:245321.
276. Wei Su-Huai, Zunger Alex Phys Rev B 1997, 55:13605.
277. Leute V., Haarmann N.J., Schmidtke H.M. Z Phys Chem 1995, 190:253.
278. Groiss H., Hesser G., Heiss W., Schäffler F., Leitsmann R., Bechstedt F., et al. Phys Rev B 2009, 79:235331.
279. Leitsmann R., Ramos L.E., Bechstedt F. Phys Rev B 2006, 74:085309. Leitsmann R, Ramos LE, Bechstedt F, Groiss H, Schäffler F, Heiss W, et al. New J Phys 2006;8:317.
280. Leitsmann R., Bechstedt F. Phys Rev B 2009, 80:165402.
281. Leitsmann R., Bechstedt F. Phys Rev B 2008, 78:205324.
282. Leitsmann R., Bechstedt F. Semicond Sci Technol 2011, 26:014005.
283. Leitsmann R., Bechstedt F. Phys Rev B 2008, 76:1.
284. Schwarzl T., Kaufmann E., Springholz G., Koike K., Hotei T., Yano M., et al. Phys Rev B 2008, 78:165320.
285. Si J., Jin S., Zhang H., Zhu P., Qiu D., Wu H., et al. Phys Lett 2008, 93:202101.
286. Olkhovets A., Hsu R.-C., Lipovskii A., Wise F.W. Phys Rev Lett 1998, 81:3539.
287. Hochreiner A., Schwarzl T., Eibelhuber M., Heiss W., Springholz G., Kolkovsky V., et al. Appl Phys Lett 2011, 98:021106.