Photoluminescence properties of Pb1-xSnxTe/CdTe quantum wells grown on (1 0 0)-oriented GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2102-2105

  Koike, Kazuto ^a   Hotei, Takanori ^a   Kawaguchi, Ryou ^a   Yano, Mitsuaki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Quantum dots; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Semiconducting lead compounds; A3. Semiconducting ternary compounds; B2. Photoluminescence

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; GALLIUM ALLOYS; LEAD; LEAD ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; TERNARY ALLOYS; TERNARY SYSTEMS; TIN; WELLS;

A1. QUANTUM DOTS; A3. MOLECULAR BEAM EPITAXY; A3. QUANTUM WELLS; A3. SEMICONDUCTING LEAD COMPOUNDS; A3. SEMICONDUCTING TERNARY COMPOUNDS; B2. PHOTOLUMINESCENCE;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 63349096994     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.112     Document Type: Article

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