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Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

(5) Fill, M a,b Khiar, A a Rahim, M a,b Felder, F a,b Zogg, H a

a ETH ZURICH (Switzerland)

b Camlin Technologies AG (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BAND ALIGNMENTS; BRAGG MIRRORS; CARRIER DIFFUSION LENGTH; CARRIER LEAKAGE; DIFFERENT STRUCTURE; HEAT SINK TEMPERATURE; HIGHER TEMPERATURES; MIDINFRARED; MODULAR DESIGNS; MULTI-QUANTUM WELL STRUCTURES; QUANTUM WELL; THRESHOLD POWER; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

INFRARED DEVICES; INFRARED LASERS; OPTICAL PUMPING; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON; SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 79959515038 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579450 Document Type: Article

Times cited : (33)

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