Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer

Journal of Applied Physics

Volumn 79, Issue 4, 1996, Pages 1911-1916

  Muller P ^a   Fach, A ^a   John, J ^a   Tiwari, A N ^a   Zogg, H ^a   Kostorz, G ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000414672     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361076     Document Type: Article

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