PbTe/CdTe single quantum wells grown on GaAs (1 0 0) substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 257, Issue 1-2, 2003, Pages 212-217

  Koike, Kazuto ^a   Honden, Takayoshi ^a   Makabe, Isao ^a   Yan, Feng Ping ^a   Yano, Mitsuaki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Photoluminescence; A1. Strain; A1. Thermal mismatch; A3. Molecular beam epitaxy; B1. PbTe CdTe

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EXPANSION; THERMAL STRESS;

THERMAL MISMATCH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0041508715     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01465-9     Document Type: Article

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