Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 722-725

  Koike, Kazuto ^a   Harada, Hisashi ^a   Itakura, Tomoyuki ^a   Yano, Mitsuaki ^a   Heiss, Wolfgang ^b   Groiss, Heiko ^b   Kaufmann, Erich ^b   Hesser, Gunter ^b   Schäffler, Friedrich ^b  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; B1. Quantum dots; B2. CdTe; B2. PbTe

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL LATTICES; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; PHOTOLUMINESCENCE; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EPITAXY MODES; INTERFACE ENERGY; MID-INFRARED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947328828     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.115     Document Type: Article

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