PbCaTe films and PbCaTe/PbTe superlattices prepared by hot-wall epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4652-4655

  Ishida, Akihiro ^a   Tsuchiya, Toshiharu ^a   Yoshioka, Nobuya ^a   Ishino, Kenei ^a   Fujiyasu, Hiroshi ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Hot wall epitaxy; IV VI semiconductor; Mid infrared; Narrow gap; Optical absorption; PbCaTe; Superlattice; X ray diffraction

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; ENERGY ABSORPTION; EPITAXIAL GROWTH; LASER APPLICATIONS; LATTICE VIBRATIONS; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING FILMS; SEMICONDUCTING LEAD COMPOUNDS; TEMPERATURE;

BAND GAP; HOT WALL EPITAXY; TERNARY ALLOY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0033175370     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4652     Document Type: Article

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