Midinfrared electroluminescence from PbTe/CdTe quantum dot light-emitting diodes

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Hochreiner, A ^a   Schwarzl, T ^a   Eibelhuber, M ^a   Heiss, W ^a   Springholz, G ^a   Kolkovsky, V ^b   Karczewski, G ^b   Wojtowicz, T ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b POLISH ACADEMY OF SCIENCES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CDTE; ELECTROLUMINESCENCE EMISSION; GAAS(1 0 0); LIGHT-EMITTING DIODE STRUCTURES; MIDINFRARED; P-I-N JUNCTIONS; PBTE; PBTE/CDTE; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM DOT; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; WAVELENGTH RANGES;

CADMIUM COMPOUNDS; DIODES; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM ALLOYS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS;

LIGHT;

EID: 78751556810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531760     Document Type: Article

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