High-quality CdTe growth in the (1 0 0)-orientation on (1 0 0)-GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 671-676

  Koike, Kazuto ^a   Tanaka, Takashi ^a   Li, Shuwei ^a   Yano, Mitsuaki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; ETCHING; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

THERMAL ETCHPITS;

SEMICONDUCTING FILMS;

EID: 0035399117     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00800-4     Document Type: Conference Paper

References (15)