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Volumn 306, Issue 2, 1997, Pages 320-325

Doping studies for molecular beam epitaxy of PbTe and Pb1-xEuxTe

Author keywords

Doping by co deposition in MBE; Far infrared laser structures; MBE growth of IV VI compounds

Indexed keywords

BARIUM COMPOUNDS; BISMUTH; CARRIER CONCENTRATION; DEGRADATION; ELECTRIC PROPERTIES; HALL EFFECT; LEAD ALLOYS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SUBSTRATES;

EID: 0031223591     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00239-3     Document Type: Article
Times cited : (21)

References (14)
  • 5
    • 0004432126 scopus 로고
    • T.S. Moss, S. Mahajan (Eds.), North-Holland, Amsterdam
    • D.L. Partin, J. Heremans, in: Handbook on Semiconductors, T.S. Moss, S. Mahajan (Eds.), North-Holland, Amsterdam, 1994, Vol. 3A, p. 369.
    • (1994) Handbook on Semiconductors , vol.3 A , pp. 369
    • Partin, D.L.1    Heremans, J.2
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.