![]() |
Volumn 306, Issue 2, 1997, Pages 320-325
|
Doping studies for molecular beam epitaxy of PbTe and Pb1-xEuxTe
|
Author keywords
Doping by co deposition in MBE; Far infrared laser structures; MBE growth of IV VI compounds
|
Indexed keywords
BARIUM COMPOUNDS;
BISMUTH;
CARRIER CONCENTRATION;
DEGRADATION;
ELECTRIC PROPERTIES;
HALL EFFECT;
LEAD ALLOYS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTOR DOPING;
SUBSTRATES;
BARIUM FLUORIDE;
FAR INFRARED LASER STRUCTURES;
SEMICONDUCTING LEAD COMPOUNDS;
|
EID: 0031223591
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)00239-3 Document Type: Article |
Times cited : (21)
|
References (14)
|